Titolo: Power Semiconductor Devices and Circuits: Proceedings of an International Symposium Held in Baden-Dattwil, Switzerland, September 26-27, 1991
Editore: Kluwer Academic Publishers Group
Data di pubblicazione: 1993
Lingua: Inglese
ISBN 10: 030644402X
ISBN 13: 9780306444029
Rilegatura: Hardback
Condizione: New
Peso: 937 grammi

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Riassunto

Proceedings of an international symposium held in Baden-Dattwil, Switzerland, in September 1991. Papers are divided into four sections: modern power devices, simulation, circuits and control concepts, and future trends. Among the topics are the MOS controlled thyristor, high-power reverse conditioning GTO, power device concepts, tool integration for power device modeling, CAD tools in power device optimization, the limit of stable device behavior, and intelligent power integrated circuits. Annotation copyright Book News, Inc. Portland, Or.

Contenuti

Modern Power Devices: Technology for High Power Devices (T. Ohmi). The MosControlled Thyristor and its Limits (F. Bauer). High Power Reverse Conducting GTO (P. Streit). Review of Power Device Concepts (R. Sittig). Simulation: Tool Integration for Power Device Modeling Including 3D Aspects (R.W. Dutton, J.D. Plummer). Use of CAD Tools in Power Device Optimization (W. Fichter et al.). Modeling the Limit of Stable Device Behavior (K. Lilja). Circuits and Control Concepts: Comparative Study of High Power Devices in Converter Circuits (H.Ch. Skudelny et al.). HVDC Valves with Light Triggered Thyristors (B.E. Danielsson). Intelligent Power Integrated Circuits (J.M. Peter). Future Trends: New Circuit Topologies (T.A. Lipo, D.M. Divan). Advanced Power Modules for Drives and Automation (H.J. Krokoszinsky, S. Kjelln�s). Power Electronics in Electrical Power Transmission Systems (A. Ekstr�m). New Materials Beyond Silcon (B.J. Baliga). Index.

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