Riassunto:
The aim of this NATO ASI has been to present an up-to-date overview of current areas of interest in amorphous materials, with particular emphasis on electronic properties and device applications. In order to limit the material to a manageable amount, the meeting was concerned almost exclusively with semiconducting materials. This volume should be regarded as a follow-on to the NATO ASI held in Sozopol, Bulgaria in 1996 and published as "Amorphous Insulators and Semiconductors" edited by M.F. Thorpe and M.1. Mitkova (Kluwer Academic Publishers, NATO ASI series, 3 High Technology - Vol. 23). The lectures and seminars fill the gap between graduate courses and research seminars. The lecturers and seminar speakers were chosen as experts in their respective areas, and the lectures and seminars that were given are presented in this volume. During the first week of the meeting, an emphasis was placed on introductory lectures while the second week focused more on research seminars. There were two very good poster sessions that generated a lot of discussion, but these are not reproduced in this volume as the editors wanted to have only larger contributions to make the proceedings more coherent.
Contenuti:
1: Structure. The Structure of Amorphous Materials; S.R. Elliott. Short- and Medium-Range Order in Ge-(S,Se) Glasses Using Raman Scattering; Y. Wang, K. Murase. Structural Characterization of Amorphous GexSe100-x by Infrared and Raman Spectroscopy; P. Nagels, et al. Structural Relaxation in Amorphous Materials; J. Málek, J. Shánelová. Thermal Properties Studies on As2Se3 Model Glass; E. Cernosková, et al. Vibrational Excitations in Amorphous Materials; S.R. Elliott. 2: Self-Organization and Rigidity. Rigidity and Self-Organization of Network Glasses and the Intermediate Phase; M.F. Thorpe, M.V. Chubynsky. Onset of Rigidity in Steps in Chalcogenide Glasses: The Intermediate Phase; P. Boolchand, et al. Network Stiffening and Chemical Ordering in Chalcogenide Glasses: 119Sw and 121Sb Mößbauer Spectroscopy of the Systems Ge(Sn)-As-Se and Ge(Sn)-Sb-Se; C. Rosenhahn, et al. The Chemical Threshold in Chalcogenide Glasses; L. Tichý, et al. Stochastic Matrix and Self-Organization in Glasses; R. Kerner. 3: Electronic Structure. First Principles Electronic Structure Methods; P. Ordejón. Electronic Structure of Amorphous Insulators and Photo-Structural Effects in Chalcogenide Glasses; D.A. Drabold, et al. The Electronic Properties of Nano, Micro and Amorphous Silicon; I. Balberg. Transport in Amorphous Semiconductors; P. Thomas, H. Overhof. 4: Photoinduced Effects. Nanometer-Scale Photo-Induced Structural Changes in Chalcogenide Glasses; A.V. Kolobov. Photoinduced Effects in Amorphous Semiconductors; E. Mytilineou. Modeling of Photoinduced Anisotropies in Chalcogenide Glasses; G.J. Adriaenssens, et al.Structure and Optically Induced Changes of Reactivity and Optical Properties of Amorphous Chalcogenides; M. Frumar, et al. 5: Amorphous Silicon and Carbon. Preparation and Structural Properties of Tetrahedrally Bonded Amorphous Carbon; W.I. Milne. Mechanical, Optical and Electrical Properties of Tetrahedrally Bonded Amorphous Carbon; W.I. Milne. Field Emission from Carbon Films Grown by the Cathodic Arc Process; W.I. Milne. Amorphous Silicon Materials and Devices for Active Matrix Arrays; R.A. Street. Optical Properties of Amorphous and Microcrystalline Silicon Layers; M. Vanecek, A. Poruba. Photograph. Participants. Index.
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