Quantum Dots : Fundamentals, Applications, and Frontiers

Bruce A Joyce

ISBN 10: 1402033133 / ISBN 13: 9781402033131

Editore: Springer Jun 2005, 2005

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Neuware - The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum heterostructures. This morphology is determined by several factors, including the manner in which strain is accommodated if the materials have different lattice constants. One of the most topical manifestations of lattice mis t is the formation of coherent thr- dimensional(3D)islandsduringtheStranski Krastanovgrowthofahighly-strained system. The prototypical cases are InAs on GaAs(001) and Ge on Si(001), though other materials combinations also exhibit this phenomenon. When the 3D islands are embedded within epitaxiallayers of a material that has a wider band gap,the carriers within the islands are con ned by the potential barriers that surround each island, forming an array of quantum dots (QDs). Such structures have been produced for both basic physics studies and device fab- cation, including QD lasers and light-emitting diodes (LEDs) operating at the c- mercially important wavelengths of 1.3 µ m and 1.55 µ m. On a more speculative level, QD ensembles have been suggested as a possible pathway for the solid-state implementation of a quantum computer. Although some of the principles of qu- tum computing have been veri ed by other means, the practical utilization of this new computingparadigmmay warrant some sort of solid state architecture. QDs are seen as possible components of such a computer, as evidenced by a number of papersappearingintheliteratureproposingQD-basedarchitecturesandworkshops that are being organized to explore these possibilities.

Codice articolo 9781402033131

Dati bibliografici

• Titolo: Quantum Dots : Fundamentals, Applications, and Frontiers
• Editore: Springer Jun 2005
• Data di pubblicazione: 2005
• Lingua: Inglese
• ISBN 10: 1402033133
• ISBN 13: 9781402033131
• Rilegatura: Buch
• Condizione: Neu
• Dimensioni: 246 L x 166 A x 33 P (millimetri) 246 millimetri di larghezza per 166 millimetri di altezza per 33 millimetri di profonditą
• Peso: 745 grammi

Descrizione articolo

Riassunto

The morphology that results during the growth of a material on the substrate of a different material is central to the fabrication of all quantum heterostructures. This morphology is determined by several factors, including the manner in which strain is accommodated if the materials have different lattice constants. One of the most topical manifestations of lattice mis?t is the formation of coherent thr- dimensional(3D)islandsduringtheStranski–Krastanovgrowthofahighly-strained system. The prototypical cases are InAs on GaAs(001) and Ge on Si(001), though other materials combinations also exhibit this phenomenon. When the 3D islands are embedded within epitaxiallayers of a material that has a wider band gap,the carriers within the islands are con?ned by the potential barriers that surround each island, forming an array of quantum dots (QDs). Such structures have been produced for both basic physics studies and device fab- cation, including QD lasers and light-emitting diodes (LEDs) operating at the c- mercially important wavelengths of 1.3 µ m and 1.55 µ m. On a more speculative level, QD ensembles have been suggested as a possible pathway for the solid-state implementation of a quantum computer. Although some of the principles of qu- tum computing have been veri?ed by other means, the practical utilization of this new computingparadigmmay warrant some sort of solid state architecture. QDs are seen as possible components of such a computer, as evidenced by a number of papersappearingintheliteratureproposingQD-basedarchitecturesandworkshops that are being organized to explore these possibilities.

Contenuti

Preface. Atomistic Processes during Quantum Dot Formation. Quantum Dots in the InAs/GaAs System: An Overview of their Formation; B.A. Joyce and D.D. Vvedensky. First-Principles Study of InAsIGaAs(OO1) Heteroepitaxy; E. Penev and P. Kratzer. Formation of Two-Dimensional Si/Ge Nanostructures Observed by STM; B. Voigtlander. Diffusion, Nucleation and Growth on Metal Surfaces; O. Biham et al. The Stranski―Krastanov Transition. The Mechanism of the Stranski―Krastanow Transition; A.G. Cullis et al. Off-lattice KMC Simulations of Stranski-Krastanov-Like Growth; M. Biehl and F. Much. Temperature Regimes of Strain-Induced InAs Quantum Dot Formation; C. Heyn and A. Bolz. Kinetic Modelling of Strained Films: Effects of Wetting and Facetting; D. Kandel and H.R. Eisenberg. Ge/Si Nanostructures with Quantum Dots grown by Ion-Beam-Assisted 135 Heteroepitaxy; A.V. Dvurechenskii et al. Self-Assembly of Quantum Dot Arrays. Lateral Organization of Quantum Dots on a Patterned Substrate; C. Priester. Some Thermodynamic Aspects of Self-Assembly of Arrays of Quantum Dots; J.E. Prieto and I. Markov. The Search for Materials with Self-Assembling Properties: The Case of Si-based Nanostructures; I. Goldfarb. Structure and Composition of Quantum Dots. X-Ray Scattering Methods for the Study of Epitaxial Self-Assembled Quantum Dots; J. Stangi et al. Carbon-Induced Ge Dots on Si(100): Interplay of Strain and Chemical Effects; G. Hadjisavvas et al. Growth Information Carried by Reflection High-Energy Electron Diffraction; A. Nemcsics. Electrons and Holes in Quantum Dots. Efficient Calculation of Electron States in Self-Assembled Quantum Dots: Application to Auger Relaxation; D. Chaney et al. Quantum Dot Molecules and Chains; W. Jaskólski et al. Collective Properties of Electrons and Holes in Coupled Quantum Dots; G. Goldoni et al. Phase Transitions in Wigner Molecules; J. Adamowski et al. Fast Control of Quantum States in Quantum Dots: Limits due to Decoherence; L. Jacak et al. OpticalProperties of Quantum Dots. Real Space Ab Initio Calculations of Excitation Energies in Small Silicon Quantum Dots; A.D. Zdetsis et al. GeSi/Si(001 Structures with Self-Assembled Islands: Growth and Optical Properties; N.V. Vostokov et al. Quantum Dots in High Electric Fields: Field and Photofield Emission from Ge Nanoclusters on Si(100); A.A. Dadykin et al. Optical Emission Behavior of Si Quantum Dots; X. Zianni and A.G. Nassiopoulou. Strain-Driven Phenomena upon Overgrowth of Quantum Dots: Activated Spinodal Decomposition and Defect Reduction; M.V. Maximov and N.N. Ledentsov.