Resistive Random Access Memory (RRAM)

Lingua: inglese

Editore: Springer, Palgrave Macmillan Mär 2016, 2016

3031009029 / 9783031009020

Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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Venditore AbeBooks dal 23 gennaio 2017

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Descrizione dell’articolo da parte del venditore

This item is printed on demand - Print on Demand Titel. Neuware -RRAM technology has made significant progress in the past decade as a competitive candidate for the next generation non-volatile memory (NVM). This lecture is a comprehensive tutorial of metal oxide-based RRAM technology from device fabrication to array architecture design. State-of-the-art RRAM device performances, characterization, and modeling techniques are summarized, and the design considerations of the RRAM integration to large-scale array with peripheral circuits are discussed. Chapter 2 introduces the RRAM device fabrication techniques and methods to eliminate the forming process, and will show its scalability down to sub-10 nm regime. Then the device performances such as programming speed, variability control, and multi-level operation are presented, and finally the reliability issues such as cycling endurance and data retention are discussed. Chapter 3 discusses the RRAM physical mechanism, and the materials characterization techniques to observe the conductive filaments andthe electrical characterization techniques to study the electronic conduction processes. It also presents the numerical device modeling techniques for simulating the evolution of the conductive filaments as well as the compact device modeling techniques for circuit-level design. Chapter 4 discusses the two common RRAM array architectures for large-scale integration: one-transistor-one-resistor (1T1R) and cross-point architecture with selector. The write/read schemes are presented and the peripheral circuitry design considerations are discussed. Finally, a 3D integration approach is introduced for building ultra-high density RRAM array. Chapter 5 is a brief summary and will give an outlook for RRAM¿s potential novel applications beyond the NVM applications.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 80 pp. Englisch.…

Codice articolo 9783031009020

Titolo
Resistive Random Access Memory (RRAM)
Autore
Shimeng Yu
Editore
Springer, Palgrave Macmillan Mär 2016
Anno di pubblicazione
2016
Condizione
Neu
Rilegatura
Taschenbuch
Lingua
inglese
ISBN 10
3031009029
ISBN 13
9783031009020
Peso dell'articolo
169 grammi
Dimensioni
235x191x5 mm

buchversandmimpf2000

Emtmannsberg, BAYE, Germania

Venditore con 5 stelle

Venditore AbeBooks dal 23 gennaio 2017

Tariffe di spedizione da Germania a U.S.A.

ArticoloDa 60 a 60 giorni lavorativiDa 60 a 60 giorni lavorativi
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