Titolo: Semiconductor Interfaces, Microstructures and Devices: Properties and Applications
Editore: Taylor & Francis 1/1/1993
Data di pubblicazione: 1993
Lingua: Inglese
ISBN 10: 0750301805
ISBN 13: 9780750301800
Rilegatura: Hardcover
Condizione: New

Descrizione articolo

Riassunto

A semiconductor interface is the contact between the semiconductor itself and a metal. The interface is a site of change, and it is imperative to ensure that the semiconducting material is sealed at this point to maintain its reliability. This book examines various aspects of interfaces, showing how they can affect microstructures and devices such as infrared photodetectors (as used in nightsights) and blue diode lasers. It presents various techniques for examining different types of semiconductor material and suggests future potential commercial applications for different semiconductor devices. Written by experts in their fields and focusing on metallic semiconductors (Cadmium Telluride and related compounds), this comprehensive overview of recent developments is an essential reference for those working in the semiconductor industry and provides a concise and comprehensive introduction to those new to the field.

Contenuti

Electric field induced localization in superlattices
R Tsu

Intersubband transitions and quantum well infrared photodetectors
K.K. Choi

Real time spectroscopic ellipsometry monitoring of semiconductor growth and etching
R.W. Collins et al.

X-ray reflectivity from heteroepitaxial layers
P. Miceli

Spontaneous and stimulated emissions from optical microcavity structures
H. Yokoyama et al.

Radiative and nonradiative recombination in AlGaAs and GaAsP heterostructures and some features of the corresponding quantum well laser
Zh. I. Alferov and D.Z. Garbuzov

Far-infrared cyclotron resonance of 2-dimensional electron gas in III-V semiconductor heterostructures
M.O. Manasreh

Optics in lower dimensional quantum confined II-VI heterostructures
A.V. Nurmikko and R.L. Gunshor

Growth and doping of silicon by low temperature molecular beam epitaxy
H-J Gossmann and D.J. Eaglesham

Point defects and charge traps in the Si/SiO^O2 system and related structures
E.H. Poindexter

Growth and characterization of silicon carbide polytypes for electronic applications
J.A. Powell et al.

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