Simulation of Semiconductor Processes and Devices 1998

Serge Biesemans

ISBN 10: 3211832084 / ISBN 13: 9783211832080

Editore: Springer Vienna Aug 1998, 1998

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This item is printed on demand - it takes 3-4 days longer - Neuware -This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices.Topics include:- semiconductor equipment simulation- process modeling and simulation- device modeling and simulation of complex structures- interconnect modeling- integrated systems for process, device, circuit simulation and optimisation- numerical methods and algorithms- compact modeling and parameter extraction- modeling for RF applications- simulation and modeling of new devices (heterojunction based, SET's, quantum effect devices, laser based .) 428 pp. Englisch.

Codice articolo 9783211832080

Dati bibliografici

• Titolo: Simulation of Semiconductor Processes and Devices 1998
• Editore: Springer Vienna Aug 1998
• Data di pubblicazione: 1998
• Lingua: Inglese
• ISBN 10: 3211832084
• ISBN 13: 9783211832080
• Rilegatura: Buch
• Condizione: Neu
• Dimensioni: 246 L x 173 A x 28 P (millimetri) 246 millimetri di larghezza per 173 millimetri di altezza per 28 millimetri di profondità
• Peso: 890 grammi

Descrizione articolo

Riassunto

This volume contains the proceedings of the 1998 International Conference on Simulation of Semiconductor Processes and Devices and provides an open forum for the presentation of the latest results and trends in modeling and simulation of semiconductor equipment, processes and devices.Topics include: semiconductor equipment simulation process modeling and simulation device modeling and simulation of complex structures interconnect modeling integrated systems for process, device, circuit simulation and optimisation numerical methods and algorithms compact modeling and parameter extraction modeling for RF applications simulation and modeling of new devices (heterojunction based, SET s, quantum effect devices, laser based ...)

Contenuti

TCAD in SRC.- TCAD in Selete.- Integration of Lithography and Etch Simulations.- Integrated Three-Dimensional Topography Simulation and Its Application to Dual-Damascene Processing.- Efficient Algorithms for Three-Dimensional Etching and Deposition Simulation.- Development of a Gas-Phase Chemistry Model for Numerical Prediction of MOVPE of GaN in Industrial Scale Reactors.- Modeling of Flow and Heat Transfer in a Vertical Reactor for the MOCVD of Zirconium-Based Coatings.- Design Optimization of RF Power MOSFET’s Using Large Signal Analysis Device Simulation of Matching Networks.- Modeling of Temperature Dependence of Floating Pad Structure’s RF Properties.- A Comprehensive Model of a VLSI Spiral Inductor Derived from the First Principles.- Simulation of SiGe Epitaxial Growth for RF-Bipolar Transistors.- Extension of Spherical Harmonic Method to RF Transient Regime.- Multiscale Modeling of the Implantation and Annealing of Silicon Devices.- Dynamics of Arsenic Dose Loss at the SiO2 Interface during TED.- Damage Accumulation by Arsenic Ion Implantation and Its Impact on Transient Enhanced Diffusion of As and B.- A Simple Continuum Model for Simulation of Boron Interstitial Clusters Based on Atomistic Calculations.- Electromagnetic Simulation for the Modeling of Interconnects.- Layout-Based 3D Solid Modeling of IC Structures and Interconnects Including Electrical Parameter Extraction.- Exponential Expansion for Rapid and Accurate Extraction of Interconnect Capacitance.- Rigorous Capacitance Simulation of DRAM Cells.- A Hybrid Technique for TCAD Modeling and Optimization.- A Qualitative Study on Optimized MOSFET Doping Profiles.- Modeling Process and Transistor Variation for Circuit Performance Analysis.- Statistical Modeling Based on Extensive TCAD Simulations: Proposed Methodology for Extraction of Fast/Slow Models and Statistical Models..- Parallel and Distributed TCAD Simulations Using Dynamic Load Balance.- Device Simulator Calibration for Quartermicron CMOS Devices.- Automatic Mesh Refinement for 3D Numerical Simulation of Thermal Diffusion in Silicon.- A Common Mesh Implementation for Both Static and Moving Boundary Process Simulations.- A Dopant-Dependent Band Gap Narrowing Model: Application for Bipolar Device Simulation.- Improved Modelling of Bandgap-Narrowing Effects in Silicon p+/n+ Junctions.- Simulation of Electron Mobility in Ultrathin Fully Depleted Single Gate SOI MOSFETs.- Simplified Simulator for Neutron-Induced Soft Errors Based on Modified BGR Model.- Quantum Effects in the Simulation of Conventional Devices.- Efficient Quantum Correction Model for Multi-Dimensional CMOS Simulations.- The Role of Quantization Effects in Inversion Hole Layers of Tunnel MOS Structures on n-Si Substrates.- Multi-Dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques.- Microsystems CAD: from FEM to System Simulation.- Methods for Model Generation and Parameter Extraction for MEMS.- A Heterogeneous Environment for Computational Prototyping and Simulation Based Design of MEMS Devices.- Bias-Dependent Low-Frequency Noise Model for Low Phase Noise InP HEMT based MMIC Oscillator Design.- 3D Modeling of Sputter Process with Monte Carlo Method.- Effects of Scaling and Lattice Heating on n-MOSFET Performance via Electrothermal Monte Carlo Simulation.- Efficient Modeling of Spatially Varying Degeneracy in Monte Carlo Particle Simulation of Highly Doped Submicron HEMT.- Monte Carlo Modelling of Spin Relaxation in a III-V Two Dimensional Electron Channel.- Combining the Scattering Matrix and Spherical Harmonic Methods for Semiconductor Modeling.- Discretization of the Brillouin Zone by an Octree/Delaunay Method with Application to Full-Band Monte Carlo Transport Simulation.- A Hybrid Approach for Building 2D and 3D Conforming Delaunay Meshes Suitable for Process and Device Simulation.- Improving the Quality of Delaunay Triangulations for the Control Volume Discretization Method.- Three-Dimensional Adaptive Mesh Relaxation.- Grid Adaptation for Device Simulation According to the Dissipation Rate.- Single Electron Memory Device Simulations.- TCAD Oriented Simulation of Single-Electron Transistors at Device Level.- Quantum Electron-Phonon Interaction for Transport in Open Nanostructures.- Origin of Drain-Current Oscillation in Ultra-Thin-SOI n-MOSFET.- Scattering Theory of Carrier Transport in Semiconductor Devices.- Statistically Reliable ‘Atomistic’ Simulation of Sub 100nm MOSFETs.- On the Modeling of CV Data for State-of-the-Art CMOS Technologies: Do We Need to Include Fast Interface States ?.- New Hot-Carrier Degradation Mechanism for MOSFET Devices Using Two-Type Interface-State Model.- Influence of the Ge Concentration on the Threshold Voltage and Subthreshold Slope of Nanoscale Vertical Si/SiGe pMOSFETs.- Anisotropic Ballistic In-Plane Transport of Electrons in Strained Si.- Simulation of Be Diffusion in the Base Layer of InGaAs/InP Heterojunction Bipolar Transistors.- Hydrodynamic Mixed-Mode Simulation.- Simulation of Dynamic Ionization Effects in 6H-SiC Devices.- Coupled 3D Process and Device Simulation of Advanced MOSFETs.- Analysis of the Asymmetric Breakdown Characteristics of Trench Isolation Structure by Using TCAD.- Characterisation of the Corner Effect by Composed 2D Device Simulations.- A Physics Based Resistance Model of the Overlap Regions in LDD-MOSFETs.- A Physically-Based Compact Model for LDMOS Transistors.- Simulation of Carrier Transport and Hot Phonon Effects in Quantum Well Laser Diodes.- Numerical Simulation of Infrared Laser Probing Techniques.- Quasi 3-D Simulation of Quantum Well DFB Lasers.- Simulation of AVC Measurements.- Statistical Circuit Modeling.- A New Compact Model for the Analysis of the Anomalies in I-V Characteristics of Schottky Diodes.- Investigation of Non-Punch-Through IGBTs with Different Trench Designs.- Elimination of Non-Simultaneous Triggering Effects in Finger-type ESD Protection Tansistors Using Heterojunction Buried Layer.- Influence of the S/D Architecture on the VT of Deep Submicron MOSFETs.- A Physically-Based Electron Mobility Model for Silicon Device Simulation.- Modeling Hole Surface- and Bulk-Mobility in the Frame of a Spherical-Harmonics Solution of the BTE..- Hydrodynamic Model for Hot Carriers in Silicon Based on the Maximum Entropy Formalism.- Minimizing Bitline Coupling Noise in DRAM with Capacitor-Equiplanar-to-Bitline (CEB) Cell Structure.- The Modeling of Electromigration: A New Challenge for TCAD?.- Correlation of Finite Element Stress Simulations with Electromigration-Induced Fractures in Tungsten Plug Structures.- Accurate Layout-Based Interconnect Analysis.- Continuous Field Analysis of Distributed Parasitic Effects Caused by Interconnects in High Power Semiconductor Modules.- Molecular Dynamics Analysis of Grain-Boundary Grooving in Thin Film Interconnects for ULSIs.- Industrial Demands on Process and Device Simulation.- Point Defect Parameter Extraction through Their Reaction with Dislocation Loops.- Recombination of Point Defects via Extended Defects and Its Influence on Dopant Diffusion.- A Systematic and Physically Based Method of Extracting a Unified Parameter Set for a Point-Defect Diffusion Model.- Two-Dimensional Simulation of Ferroelectric Nonvolatile Memory Cells.- Influence of the Poly Gate Depletion Effect on Programming EEPROM Cells.- Simulation Based Development of EEPROM Devices within a 0.35 µ m Process.- Modeling the Trapping and De-Trapping of Phosphorus at the Si to SiO2 Interface.- Derived Boundary Conditions for Viscous Thermal Oxidation Equations in Pressure Potential Form.- Modeling and Simulation of Oxygen Precipitation in CZ Silicon.- Predictive Soft Error Rate Evaluation System.- Modeling of Particle-Irradiated Devices.- 3-D Simulation of an Enhanced Field-Funneling Effect on the Collection of Alpha-Particle-Generated Carriers in p- on p+ Epitaxial Substrates.- Author Index.