Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells : The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of Spin Polarized Electrons in Ferromagnetic

Lingua: inglese

Editore: Saarbrücken : VDM Verlag Dr. Müller, 2008

3639019997 / 9783639019995

Da: Versandbuchhandlung Kisch & Co., Fürstenberg OT Blumenow, GermaniaVersandbuchhandlung Kisch & Co.

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Neu Neuware; original eingeschweisst; Rechnung mit MwSt.; new item, still sealed; Bestellungen bis 15 Uhr werden am gleichen Werktag verschickt_____The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. -The injection of spin polarised electrons into semiconductors is a fundamental challenge in the emergent field of spin electronics. This work is an investigation into spin injection from magnetic thin film contacts into (100) GaAs/InGaAs quantum wells in spin light emitting diodes (spin LEDs). This structure is relevant to many quantum dot device layers. The spin injection characteristics are examined as a function of photon energy, magnetic field, applied bias, external optical efficiency and temperature. Further, the Heusler alloys Co2TiSn and Co2CrAl are investigated through ab initio electronic structure calculations as potentially highly polarised spin injectors. Pronounced minority spin band gaps were found in these alloys and while majority spins are metallic, minority spins undergo hole-like dispersion near the Fermi level. While spin injection is observed from both Heusler alloy and Fe injectors, Fe is a more efficient spin injector and gives room temperature results. The bias dependent spin injection shows a decrease at higher voltages due to hot electron spin transport in the semiconductor and shows similar trends for both types of spin injector. 208 pp. Englisch.…

Codice articolo INF1000344446

Dati bibliografici

Titolo
Spin Injection from Magnetic Thin Films into InGaAs Quantum Wells : The Physics of Electron Spin Polarization in Magnetic Metals and the Injection of Spin Polarized Electrons in Ferromagnetic
Autore
Mark Hickey
Editore
Saarbrücken : VDM Verlag Dr. Müller
Anno di pubblicazione
2008
Condizione
Neu
Rilegatura
Taschenbuch
Lingua
inglese
ISBN 10
3639019997
ISBN 13
9783639019995
Peso dell'articolo
328 grammi
Dimensioni
220x150x12 mm

Versandbuchhandlung Kisch & Co.

Fürstenberg OT Blumenow, Germania

Venditore con 5 stelle

Venditore AbeBooks dal 12 febbraio 2002

Tariffe di spedizione da Germania a U.S.A.

ArticoloDa 4 a 14 giorni lavorativiDa 4 a 14 giorni lavorativi
Primo articoloEUR 35,00EUR 45,00
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