The three-dimensional device simulation has become a necessary tool for the design and investigation of complex device structures. The evolution of the three-dimensional simulation tools is directly linked to the scaling of the devices and the increasing complex� ity of dynamic random access memory (DRAM) cells. Scaling of MOSFET devices led to a three-dimensional geometry with effects which cannot be handled by two-dimensional simulations anymore. With increasing integration density in DRAMs the third dimen� sion had to be utilized to realize the storage capacitor. The result� ing leakage problems have to be investigated and the cell design optimized by means of three-dimensional simulations. This book is intended for senior undergraduate students in applied physics, electrical engineering and computational physics, as well as for scientists and engineers involved in semiconductor device re� search and development. It is also intended for software engineers and all those who are concerned with simulation. The book will give an overview on the problems and activities con� cerning three-dimensional device simulation, without the claim of being a classical textbook. It starts from the classical semiconduc� tor equations, discusses the physical models used in device simu� lation, describes the discretization and some numerical methods for solving the differential equations. The application of the three� dimensional simulation to VLSI device engineering is illustrated by a few specific examples.

Contenuti:

1 Introduction.- 2 Basic Physical Models.- 3 Discretization.- 4 Numerical Solution.- 5 Examples.

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