Tunneling Field Effect Transistor Technology

ISBN 10: 3319316516 / ISBN 13: 9783319316512

Editore: Springer, 2016

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Dati bibliografici

• Titolo: Tunneling Field Effect Transistor Technology
• Editore: Springer
• Data di pubblicazione: 2016
• Lingua: Inglese
• ISBN 10: 3319316516
• ISBN 13: 9783319316512
• Rilegatura: Rilegato
• Condizione: New

Descrizione articolo

Riassunto

This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs).  Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

Dalla quarta di copertina

This book provides a single-source reference tothe state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, theTFETs fabrication process and the important roles that TFETs will play inenabling integrated circuit designs for power efficiency. 

·        Provides comprehensive reference to tunneling field effecttransistors (TFETs);

·        Covers all aspects of TFETs, from device process to modeling andapplications;

·        Enables design of power-efficient integrated circuits, with lowpower consumption TFETs.