she pin ci kong jian du cheng chang yang hua mei bo mo ji qi ying yong yu zha ji jie dian ceng te xing yan jiu

Hou Yan Cao

ISBN 10: 3639739396 / ISBN 13: 9783639739398

Editore: ¿¿¿¿¿¿¿ Jul 2015, 2015

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Neuware -ben yan jiu yong she pin ci kong jian du fa cheng chang yang hua mei MgO bo mo yu xi Si ji ban shang bing you X guang guang dian zi neng pu yi X ray photoelectron spectroscopy sao miao shi dian zi xian wei jing Scanning electron microscope er ci zi zhi pu yi Secondary ion mass spectrometer he tuo yuan yi Ellipsometer deng yi qi dui MgO bo mo jin jie gou ji guang xue te xing ce er ban dao ti te xing fen xi yi ze dui yi MgO dang zuo zha ji yang hua ceng de tong gong han zha ji dian ji yu tong chan za nong Si ji ban zhi shu yang hua wu ban dao ti Metal oxide semiconductor jian cheng MOS yuan jian jin dian te xing de ce you shi yan jie guo ke zhi zai guang xue te xing fang mian MgO bo mo yu Si ji ban zhi jian cun zai jie mian que xian ceng zai dian te xing fang mian yong MOS yuan jian de bian wen dian dian ya Current voltage te xing qu xian yan jiu zai zi chuan shu de xiang guan ji zhi jie ci tan tao MgO bo mo nei bu de zai zi bu zhuo shi fang yu xiang guan que xian neng jie de wei zhi zai you bian pin de dian rong dian ya Capacitance voltage te xing qu xian ce MgO bo mo de xiang dui jie dian chang zui hou yu zai zi chuan shu ji zhi suo ji suan de jie guo hu xiang bi jiaoVDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 124 pp. Chinesisch.

Codice articolo 9783639739398

Dati bibliografici

• Titolo: she pin ci kong jian du cheng chang yang hua mei bo mo ji qi ying yong yu zha ji jie dian ceng te xing yan jiu
• Editore: ¿¿¿¿¿¿¿ Jul 2015
• Data di pubblicazione: 2015
• ISBN 10: 3639739396
• ISBN 13: 9783639739398
• Rilegatura: Taschenbuch
• Condizione: Neu
• Dimensioni: 220 L x 150 A x 8 P (millimetri) 220 millimetri di larghezza per 150 millimetri di altezza per 8 millimetri di profondità
• Peso: 203 grammi

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Riassunto

本研究利用射頻磁控濺鍍法成長氧化鎂(MgO)薄膜於矽(Si)基板上。並由X 光光電子能譜儀(X-ray photoelectron spectroscopy)、掃描式電子顯微鏡(Scanning electron microscope)、二次離子質譜儀(Secondary ion mass spectrometer)和橢圓儀(Ellipsometer)等儀器對MgO薄膜進行結構及光學特性量測，而半導體特性分析儀則對以MgO當作閘極氧化層的不同功函數閘極電極與不同摻雜濃度Si基板之金屬-氧化物-半導體(Metal-oxide-semiconductor，簡稱MOS)元件進行電特性的量測。由實驗結果可知，在光學特性方面，MgO薄膜與Si基板之間存在界面缺陷層。在電特性方面，利用MOS元件的變溫電流-電壓(Current-voltage)特性曲線，研究載子傳輸的相關機制，藉此來探討MgO薄膜內部的載子捕捉/釋放與相關缺陷能階的位置。再由變頻的電容-電壓(Capacitance-voltage)特性曲線量測MgO薄膜的相對介電常數，最後與載子傳輸機制所計算的結果互相比較。