Fazal talukdar (9 risultati)
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Da: Books in my Basket, New Delhi, IndiaBooks in my Basket
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 24,54
EUR 18,00 spedizioneSpedito da India a U.S.A.Quantità: 1 disponibili
Soft cover. Condizione: New. ISBN:9789395700498.
Da: Books Puddle, New York, NY, U.S.A.Books Puddle
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 27,05
EUR 3,49 spedizioneSpedito in U.S.A.Quantità: 4 disponibili
Condizione: New.
Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 22,78
EUR 9,95 spedizioneSpedito da Germania a U.S.A.Quantità: 4 disponibili
Condizione: New.
- Brossura
Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
Contatta il venditoreVenditore con 4 stelleCondizione: Usato - Come nuovo
EUR 105,08
EUR 29,32 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
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- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 39,90
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, telecommunication system requires high performance, low noise, low power and high linear RF circuits. Since the digital modulation design requires highly linear front end circuits, the linearity requirement of the LNA bec…omes more rigorous. Due to possible large interference signal tones at the receiver end along with the carrier, LNA is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The project focused on designing a 5.5 GHz linear LNA using a standard UMC.18um technology. The LNA employed inductive source degeneration topology with on chip passive spiral inductor. Employing the body biasing technique with post distortion scheme not only achieve high linearity, but also minimizes the degradation of gain, noise figure and power consumption. The simulation results show that CMOS tech has the capability to achieve a 5.5 GHz LNA. The LNA draws a 10.8mw power on 1.8V power supply while achieve gain of 11.4dB IIP3 of 9.20dBm 76 pp. Englisch.
- Brossura
- Print on Demand
Da: moluna, Greven, Germaniamoluna
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 34,25
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: A. Talukdar FazalDr.Fazal A Talukdar obtained his Bachelor of Engineering (Hons) from Regional Engineering College, Silchar (now, NIT Silchar) in 1987. He obtained his MTech in 1993 and PhD in 2002-03…from Indian Institute of Technol.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 39,90
EUR 60,66 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Recently, telecommunication system requires high performance, low noise, low power and high linear RF circuits. Since the digital modulation design requires highly linear front end circuits, the linearity requirement of the LNA becomes…more rigorous. Due to possible large interference signal tones at the receiver end along with the carrier, LNA is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The project focused on designing a 5.5 GHz linear LNA using a standard UMC.18um technology. The LNA employed inductive source degeneration topology with on chip passive spiral inductor. Employing the body biasing technique with post distortion scheme not only achieve high linearity, but also minimizes the degradation of gain, noise figure and power consumption. The simulation results show that CMOS tech has the capability to achieve a 5.5 GHz LNA. The LNA draws a 10.8mw power on 1.8V power supply while achieve gain of 11.4dB IIP3 of 9.20dBm.
- Brossura
- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 39,90
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recently, telecommunication system requires high performance, low noise, low power and high linear RF circuits. Since the digital modulation design requires highly linear front end circuits, the linearity requirement of the LNA becomes… more rigorous. Due to possible large interference signal tones at the receiver end along with the carrier, LNA is expected to provide high linearity, thus preventing the intermodulation tones created by the interference signal from corrupting the carrier signal. The research focuses on designing a LNA which achieves high linearity without sacrificing any of its specifications of gain and Noise Figure (NF). The project focused on designing a 5.5 GHz linear LNA using a standard UMC.18um technology. The LNA employed inductive source degeneration topology with on chip passive spiral inductor. Employing the body biasing technique with post distortion scheme not only achieve high linearity, but also minimizes the degradation of gain, noise figure and power consumption. The simulation results show that CMOS tech has the capability to achieve a 5.5 GHz LNA. The LNA draws a 10.8mw power on 1.8V power supply while achieve gain of 11.4dB IIP3 of 9.20dBmVDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch.
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Da: preigu, Osnabrück, Germaniapreigu
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 36,35
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Design of 5.5 GHz Highly Linear CMOS Low Noise Amplifier | Fazal A. Talukdar (u. a.) | Taschenbuch | 76 S. | Englisch | 2013 | LAP LAMBERT Academic Publishing | EAN 9783659495939 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]d…e | Anbieter: preigu Print on Demand.
