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Quantum Transport in Ultrasmall Devices
Lingua: Inglese
Editore: Kluwer Academic/Plenum Publishers, 1995
ISBN 10: 0306449994 ISBN 13: 9780306449994
AffareEUR 5,84
Spedizione EUR 16,50
Spedito da Francia a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Comme neuf. Edition 1995. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, As new. Edition 1995. Ammareal gives back up to 15% of this item's net price to charity organizations.
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The Gunn-Hilsum Effect
Editore: Academic Press, New York, 1979
Da: Sleepy Hollow Books, Huntington, VT, U.S.A.
Valutazione del venditore 5 su 5 stelle
Prima edizione
Hardcover. First Edition. Blue cloth, orange lettering, no dj, like new. Science; 730.
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The Gunn-Hilsum Effect
Data di pubblicazione: 1979
Da: Library House Internet Sales, Grand Rapids, OH, U.S.A.
Valutazione del venditore 4 su 5 stelle
Hardcover. Condizione: Good. No Jacket. The Gunn-Hilsum Effect covers the physical principles controlling the operation of transferred electron devices. These devices have been proven quite useful in the generation, amplification, and processing of microwave signals well into tens of gigahertz range. Organized into seven chapters, the book focuses on the analytical and numerical approaches of the two vital aspects of device behavior for a given bulk semiconductor: boundary conditions or contacts and the local circuit environment. The opening chapter of this book discusses the negative differential mobility (NDM) characteristics for a range of electric fields in the velocity-field relation of specific semiconductors and the response of such a sample to a charge fluctuation, leading to the growth of stationary and/or traveling high electric field domains. The next two chapters describe how the boundary conditions and the circuit control the manifestation of current instabilities in such systems and how this control can be understood in a simple manner. Chapters 4 and 5 discuss the numerical and experimental investigations of comparatively long bulk samples, with an emphasis on the essential NDM semiconductor n-GaAs. These chapters also examine the production of different current-voltage relationships and instabilities by cathode contacts and the control of the oscillatory characteristics of an electrically unstable sample by different circuit conditions. Chapter 6 presents both time-independent and time-dependent computations, with the latter focusing on the small-signal impedance and stability aspects. The last chapter of this book addresses the construction and evaluation of typical short devices, describes how their oscillatory characteristics compare with the long samples studied in the first six chapters, and discusses the use of short devices as amplifiers. This book is an ideal source for device engineers and designers wishing to apply transferred electron devices in creative ways. Please note the image in this listing is a stock photo and may not match the covers of the actual item. Book.
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The Physics of Submicron Structures
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 60,68
Spedizione EUR 13,89
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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The Physics of Submicron Structures
Da: Chiron Media, Wallingford, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 57,31
Spedizione EUR 17,97
Spedito da Regno Unito a U.S.A.Quantità: 10 disponibili
Aggiungi al carrelloPaperback. Condizione: New.
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The Physics of Submicron Structures
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 376.
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The Physics of Instabilities in Solid State Electron Devices
Da: BennettBooksLtd, Los Angeles, CA, U.S.A.
Valutazione del venditore 5 su 5 stelle
hardcover. Condizione: New. In shrink wrap. Looks like an interesting title!
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EUR 50,25
Spedizione EUR 70,00
Spedito da Germania a U.S.A.Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. The Physics of Submicron Structures | Harold L. Grubin | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9781461297147 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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The Physics of Submicron Structures
Lingua: Inglese
Editore: Springer US, Springer New York, 2011
ISBN 10: 1461297141 ISBN 13: 9781461297147
EUR 59,97
Spedizione EUR 63,53
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.
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EUR 42,56
Spedizione EUR 105,00
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloCondizione: Gut. Zustand: Gut | Sprache: Englisch | Produktart: Bücher | Keine Beschreibung verfügbar.
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The Physics of Instabilities in Solid State Electron Devices
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 164,67
Spedizione EUR 13,89
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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The Physics of Instabilities in Solid State Electron Devices
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 164,67
Spedizione EUR 13,89
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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The Physics of Instabilities in Solid State Electron Devices
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 480 Index.
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The Physics of Instabilities in Solid State Electron Devices
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 484 Index.
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EUR 141,20
Spedizione EUR 70,00
Spedito da Germania a U.S.A.Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. The Physics of Instabilities in Solid State Electron Devices | Harold L. Grubin (u. a.) | Taschenbuch | xii | Englisch | 2013 | Springer | EAN 9781489923462 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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The Physics of Instabilities in Solid State Electron Devices
Lingua: Inglese
Editore: Springer US, Springer New York, 2013
ISBN 10: 1489923462 ISBN 13: 9781489923462
EUR 168,73
Spedizione EUR 63,61
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
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Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, ... Ciocco, Italy (NATO Science Series B:, 342)
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 225,83
Spedizione EUR 13,89
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Quantum Transport in Ultrasmall Devices: Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, 1994, in II Ciocco, Italy (NATO Science Series B:)
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 225,83
Spedizione EUR 13,89
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 225,83
Spedizione EUR 13,89
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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The Physics of Submicron Semiconductor Devices (NATO Science Series B:, 180)
Da: Ria Christie Collections, Uxbridge, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 225,83
Spedizione EUR 13,89
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
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Quantum Transport in Ultrasmall Devices
Da: GreatBookPricesUK, Woodford Green, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 224,09
Spedizione EUR 17,40
Spedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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EUR 168,73
Spedizione EUR 64,24
Spedito da Germania a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloBuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The past three decades have been a period where useful current and voltage instabilities in solids have progressed from exciting research problems to a wide variety of commercially available devices. Materials and electronics research has led to devices such as the tunnel (Esaki) diode, transferred electron (Gunn) diode, avalanche diodes, real-space transfer devices, and the like. These structures have proven to be very important in the generation, amplification, switching, and processing of microwave signals up to frequencies exceeding 100 GHz. In this treatise we focus on a detailed theoretical understanding of devices of the kind that can be made unstable against circuit oscillations, large amplitude switching events, and in some cases, internal rearrangement of the electric field or current density distribution. The book is aimed at the semiconductor device physicist, engineer, and graduate student. A knowledge of solid state physics on an elementary or introductory level is assumed. Furthermore, we have geared the book to device engineers and physicists desirous of obtaining an understanding substantially deeper than that associated with a small signal equivalent circuit approach. We focus on both analytical and numerical treatment of specific device problems, concerning ourselves with the mechanism that determines the constitutive relation governing the device, the boundary conditions (contact effects), and the effect of the local circuit environment.
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Quantum Transport in Ultrasmall Devices
Da: GreatBookPrices, Columbia, MD, U.S.A.
Valutazione del venditore 5 su 5 stelle
EUR 241,66
Spedizione EUR 2,27
Spedito in U.S.A.Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
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The Physics of Instabilities in Solid State Electron Devices
Da: Revaluation Books, Exeter, Regno Unito
Valutazione del venditore 5 su 5 stelle
EUR 236,74
Spedizione EUR 14,50
Spedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. reprint edition. 480 pages. 9.25x6.10x1.09 inches. In Stock.
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Quantum Transport in Ultrasmall Devices
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 556 Index.
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EUR 186,70
Spedizione EUR 70,00
Spedito da Germania a U.S.A.Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. The Physics of Submicron Semiconductor Devices | Harold L. Grubin (u. a.) | Taschenbuch | viii | Englisch | 2013 | Springer US | EAN 9781489923844 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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EUR 186,70
Spedizione EUR 70,00
Spedito da Germania a U.S.A.Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Quantum Transport in Ultrasmall Devices | Proceedings of a NATO Advanced Study Institute on Quantum Transport in Ultrasmall Devices, held July 17-30, 1994, in II Ciocco, Italy | David K. Ferry (u. a.) | Taschenbuch | x | Englisch | 2012 | Springer | EAN 9781461358091 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Quantum Transport in Ultrasmall Devices
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 556 Index.
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The Physics of Submicron Semiconductor Devices
Da: Books Puddle, New York, NY, U.S.A.
Valutazione del venditore 4 su 5 stelle
Condizione: New. pp. 748.
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Quantum Transport in Ultrasmall Devices
Da: Majestic Books, Hounslow, Regno Unito
Valutazione del venditore 4 su 5 stelle
EUR 264,90
Spedizione EUR 7,54
Spedito da Regno Unito a U.S.A.Quantità: 1 disponibili
Aggiungi al carrelloCondizione: New. pp. 556 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
