hong seungbum (56 risultati)

Hardcover. Condizione: As New. Nice, clean condition, this book has a minor tear on the cover, no missing pages, pages are clean.

Condizione: New. In.

Paperback. Condizione: New.

Hardcover. Condizione: As New. like new.

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Condizione: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.

Condizione: New. In.

Condizione: New. In.

Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 288 | Sprache: Englisch | Produktart: Bücher | This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers¿ understanding of future trends in non-volatile memories.

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Gebunden. Condizione: New.

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Hardcover. Condizione: Brand New. 221 pages. 9.00x6.00x0.56 inches. In Stock.

Hardcover. Condizione: Brand New. 2014 edition. 273 pages. 9.20x5.00x0.50 inches. In Stock.

Taschenbuch. Condizione: Neu. Emerging Non-Volatile Memories | Seungbum Hong (u. a.) | Taschenbuch | xii | Englisch | 2016 | Springer | EAN 9781489979308 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Buch. Condizione: Neu. Neuware -This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers¿ understanding of future trends in non-volatile memories.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 288 pp. Englisch.

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers' understanding of future trends in non-volatile memories.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory.This book also:Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others.Provides an overview of non-volatile memory fundamentals.Broadens readers' understanding of future trends in non-volatile memories.

Paperback. Condizione: Brand New. reprint edition. 285 pages. 9.25x6.10x0.68 inches. In Stock.

Hardcover. Condizione: Like New. Like New. book.

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Nonvolatile memories are becoming an increasingly important electronic component, due to the ever-increasing need for data storage in multimedia and other mobile applications where electronic components are replacing magnetic hard drives. Today, Flash is the main nonvolatile memory technology, but further scaling of this technology will likely be restricted by important physical and material limitations. This explains recent increased research on new concepts for nonvolatile memories, for which new developments in materials science and technology, the focus of this book, are key. Chapters include Advanced Flash Memory which deals with solutions for scaled Flash memory, including the use of new high-k layers and nanocrystals. Resistive switching concepts are discussed in the Oxide Resistive Switching Memory and Organic Resistive Switching Memory chapters. More research on polymer memories are detailed in Nanoparticle-Based Organic Memory and Organic Ferroelectric Memory. Two chapters deal with New Phase Change Memory and Deposition Methods and Future Explorative Memory Concepts, including piezoelectric, ferroelectric and ferromagnetic concepts.

Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Condizione: New. In.

Condizione: New. In.

Taschenbuch. Condizione: Neu. Nanoscale Phenomena in Ferroelectric Thin Films | Seungbum Hong | Taschenbuch | xiv | Englisch | 2014 | Springer US | EAN 9781461347712 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

Taschenbuch. Condizione: Neu. Neuware -This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, 'Testing and characterization of ferroelectric thin film capacitors,' written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, 'Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size,' Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, 'Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy,' Prof. A.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch.

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents the recent advances in the field of nanoscale science and engineering of ferroelectric thin films. It comprises two main parts, i.e. electrical characterization in nanoscale ferroelectric capacitor, and nano domain manipulation and visualization in ferroelectric materials. Well known le'adingexperts both in relevant academia and industry over the world (U.S., Japan, Germany, Switzerland, Korea) were invited to contribute to each chapter. The first part under the title of electrical characterization in nanoscale ferroelectric capacitors starts with Chapter 1, 'Testing and characterization of ferroelectric thin film capacitors,' written by Dr. I. K. Yoo. The author provides a comprehensive review on basic concepts and terminologies of ferroelectric properties and their testing methods. This chapter also covers reliability issues in FeRAMs that are crucial for commercialization of high density memory products. In Chapter 2, 'Size effects in ferroelectric film capacitors: role ofthe film thickness and capacitor size,' Dr. I. Stolichnov discusses the size effects both in in-plane and out-of-plane dimensions of the ferroelectric thin film. The author successfully relates the electric performance and domain dynamics with proposed models of charge injection and stress induced phase transition. The author's findings present both a challenging problem and the clue to its solution of reliably predicting the switching properties for ultra-thin ferroelectric capacitors. In Chapter 3, 'Ferroelectric thin films for memory applications: nanoscale characterization by scanning force microscopy,' Prof. A.