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Condizione: Fair. Volume 22. This is an ex-library book and may have the usual library/used-book markings inside.This book has hardback covers. Clean from markings. In fair condition, suitable as a study copy. No dust jacket. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,600grams, ISBN:3540084622.

8° Gebundene Ausgabe. Condizione: Sehr gut. 225 Seiten Ausgetragenes Bibliotheksexemplar, fast top erhalten MIG-06-01A Sprache: Englisch Gewicht in Gramm: 464.

Condizione: Good. 396 pp., Hardcover, ex library, else text clean and binding tight. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country.

Condizione: New. In.

Paperback. Condizione: New. This monograph provides a comprehensive treatment of the properties of hydrogen as an impurity, beginning at an introductory level. It describes the states and binding sites that hydrogen assumes in the lattice, the passivation of shallow and deep impurities, the properties of hydrogen-related defects in semiconductors, the diffusivity of the various forms of hydrogen, and the effects of hydrogen on the mechanical properties of semiconductors. Emphasis is placed on the ways in which hydrogen is incorporated during crystal growth and device fabrication, an area of tremendous practical importance. Softcover reprint of the original 1st ed. 1992.

Paperback. Condizione: New.

Hardcover. Condizione: Good. No Jacket. 426 p; 270 Fig; Library-Stamp on Title-page, else good.

Hardcover. Condizione: Good. No Jacket. 310 p; 179 Fig, Library-Stamp at Title-Page, else good.

Condizione: Good. 434 pp., hardcover, ex library else text clean and binding tight. - If you are reading this, this item is actually (physically) in our stock and ready for shipment once ordered. We are not bookjackers. Buyer is responsible for any additional duties, taxes, or fees required by recipient's country. Photos available upon request.

Paperback. Condizione: Brand New. reprint edition. 376 pages. 9.20x6.10x0.79 inches. In Stock.

Paperback. Condizione: Brand New. 404 pages. 8.75x6.25x0.91 inches. In Stock.

Gebundene Ausgabe. Condizione: Gut. 426 S. : Ill., graph. Darst. Alle Bücher & Medienartikel von Book Broker sind stets in gutem & sehr gutem gebrauchsfähigen Zustand. Dieser Artikel weist folgende Merkmale auf: Helle/saubere Seiten in fester Bindung. Leichte Gebrauchsspuren. Sprache: Englisch Gewicht in Gramm: 788.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encourage ment from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swamina than, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tul chinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the art work. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. l Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. l. 2 Hydrogen Implantation . . . . . . .

Condizione: Used. pp. xiii + 382.

Hardcover. Condizione: Gut. 310 Seiten Guter Zustand/ Good With figures and tables. Ex-Library. ha1042611 Sprache: Englisch Gewicht in Gramm: 850.

Hardcover. Condizione: Gut. 310 Seiten Guter Zustand/ Good With figures and tables. Ex-Library. ha1034313 Sprache: Englisch Gewicht in Gramm: 600.

Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 376 | Sprache: Englisch | Produktart: Bücher | This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encourage­ ment from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swamina­ than, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tul­ chinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the art­ work. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. l Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. l. 2 Hydrogen Implantation . . . . . . .

Paperback. Condizione: New. This monograph provides a comprehensive treatment of the properties of hydrogen as an impurity, beginning at an introductory level. It describes the states and binding sites that hydrogen assumes in the lattice, the passivation of shallow and deep impurities, the properties of hydrogen-related defects in semiconductors, the diffusivity of the various forms of hydrogen, and the effects of hydrogen on the mechanical properties of semiconductors. Emphasis is placed on the ways in which hydrogen is incorporated during crystal growth and device fabrication, an area of tremendous practical importance. Softcover reprint of the original 1st ed. 1992.

Condizione: New.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Condizione: As New. Unread book in perfect condition.

Pappband, foliert, 0. ^310 S., Pappband, foliert, ehemaligess Bibliotheksexemplar mit den üblichen Stempeln und Rückennummer, gut erhalten, 0,600 kg.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This monograph arose out of the recognition of the importance of hydrogen in modern semiconductor technology. Hydrogen is a component of most chemicals used in the fabrication of electronic and photonic devices, is easily incorporated into semiconductors and it is a model impurity for studying defect reactions in solids. While writing this volume we have received a good deal of encourage ment from our colleagues at AT&T Bell Laboratories, State University of New York at Albany and Lehigh University, and from collaborators at other institutions: to them we extend our sincere appreciation. In particular we would like to thank W. e. Dautremont-Smith, J. Lopata, V. Swamina than, K. Bergman, L. e. Synder, P. Deak, J. T. Borenstein, T. S. Shi, D. Tul chinsky, G. G. DeLeo, W. B. Fowler, G. D. Watkins and D. Kozuch for their crucial contributions to this work. We would also like to thank Mrs. Danuta Sowinska-Kahn for her unfailing expertise in preparing much of the art work. Finally we owe a great debt to Helmut Lotsch of Springer-Verlag for his initial suggestion to write this book and then his patient and professional guidance in seeing the project to fruition. Murray Hill, NJ S. J. Pearton Albany, NY J. w. Corbett Bethlehem, P A M. Stavola October 1991 v Contents 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. Hydrogen Incorporation in Crystalline Semiconductors 4 2. l Techniques for Hydrogen Incorporation in Semiconductors . . . . . . . . . . . . . . . . . . . . . . . 5 2. 1. 1 Hydrogen Plasma Exposure. . . . . . . . . . . . . . . . . . . 5 2. l. 2 Hydrogen Implantation . . . . . . . 376 pp. Englisch.

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This review of the properties of hydrogen in crystalline semiconductors emphasizes the ways in which hydrogen is incorporated during crystal growth and device fabrication, an area of tremendous practical importance. It is the first monograph covering the pr.

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This review of the properties of hydrogen in crystalline semiconductors emphasizes the ways in which hydrogen is incorporated during crystal growth and device fabrication, an area of tremendous practical importance. It is the first monograph covering the properties of hydrogen as an impurity in detail, and will be of interest to all those involved in device physics and semiconductor research and development.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 376 pp. Englisch.