Editore: Materials Research Society, 1997
Da: Mythos Center Books, Frontenac, MN, U.S.A.
Condizione: Very Good. Materials Research Society, 1997. Symposium proceedings. Minor bumps on lower right edge, head and heek, otherwise clean, unmarked copy. From the library of Prof. Roger Stuewer, historian of physics, UMN. Due to size or weight, this item may require additional postage for international or priority shipping.
Hardcover. Condizione: Very Good. VG+. Very light wear. Interior is pristine. No writing or markings of any kind.
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Aggiungi al carrelloCondizione: New. In.
Condizione: New. pp. 596.
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. The Physics and Technology of Amorphous SiO2 | Roderick A. B. Devine | Taschenbuch | xii | Englisch | 2011 | Springer | EAN 9781461283010 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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Aggiungi al carrelloPaperback. Condizione: Brand New. 591 pages. 9.70x6.70x1.20 inches. In Stock.
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.
EUR 169,10
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Aggiungi al carrelloPaperback. Condizione: Like New. Like New. book.
Lingua: Inglese
Da: Antiquariat Bookfarm, Löbnitz, Germania
EUR 85,58
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Aggiungi al carrelloHardcover. Ehem. Bibliotheksexemplar mit Bib.-Signatur und Stempel in GUTEM Zustand. Kaum Gebrauchsspuren. Sprache: Englisch Gewicht in Gramm: 550.
Da: Brook Bookstore On Demand, Napoli, NA, Italia
EUR 86,24
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Aggiungi al carrelloCondizione: new. Questo è un articolo print on demand.
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 85,59
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections. 596 pp. Englisch.
Da: moluna, Greven, Germania
EUR 92,27
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specia.
Da: Majestic Books, Hounslow, Regno Unito
EUR 140,14
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 596.
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 143,65
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Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 596.
Lingua: Inglese
Editore: Springer, Springer Okt 2011, 2011
ISBN 10: 1461283019 ISBN 13: 9781461283010
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 106,99
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 596 pp. Englisch.