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Condizione: New. Brand New Original US Edition. Customer service! Satisfaction Guaranteed.

Condizione: New.

Condizione: New.

Condizione: New.

Condizione: New.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Condizione: As New. Unread book in perfect condition.

Hardcover. Condizione: New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 7-12 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.

Hardcover. Condizione: Brand New. 472 pages. 9.18x6.12x9.45 inches. In Stock.

Hardcover. Condizione: new. Hardcover. The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology. The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Hardcover. Condizione: new. Hardcover. The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology. The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.

HRD. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

HRD. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

Buch. Condizione: Neu. Field-Effect Transistors Technology | From Sustainability to Next-Generation VLSI Design | Ashish Raman (u. a.) | Buch | Einband - fest (Hardcover) | Englisch | 2025 | CRC Press | EAN 9781032876078 | Verantwortliche Person für die EU: Libri GmbH, Europaallee 1, 36244 Bad Hersfeld, gpsr[at]libri[dot]de | Anbieter: preigu Print on Demand.

Hardcover. Condizione: new. Hardcover. The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.FeaturesHighlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology. The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Buch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The text offers readers a thorough understanding of the basic ideas and complex design procedures of nanoscale devices. It further discusses different types of semiconductor device structures and covers modeling and analyzing semiconductor devices using state-of-the-art simulation tools and techniques.