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Aggiungi al carrelloContents 1 Theoretical Aspects of Organic Chemistry 2 Alkanes 3 Alkenes 4 Alkynes and Dienes 5 Aromatic Hydrocarbons Benzene Reactions and Electrophilic Aromatic Substitution 6 Alkyl Halides and Aryl Halides 7 Alcohols 8 Ethers and Phenols 9 Aldehydes and 506 pp.
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Aggiungi al carrelloPaperback. Condizione: Brand New. 524 pages. 9.84x7.56x1.26 inches. In Stock.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3838369386 ISBN 13: 9783838369389
Da: preigu, Osnabrück, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Flux Profile Modeling using Monte Carlo Simulation | A simulation tool for deposition processess using Molecular Beam Epitaxy | Ramprasad Vijayagopal (u. a.) | Taschenbuch | 104 S. | Englisch | 2010 | LAP LAMBERT Academic Publishing | EAN 9783838369389 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.
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Aggiungi al carrelloCondizione: New. Print on Demand pp. 524.
Editore: Mjp Publishers, 2024
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Aggiungi al carrelloPAP. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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Aggiungi al carrelloPAP. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing Jun 2010, 2010
ISBN 10: 3838369386 ISBN 13: 9783838369389
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers. 104 pp. Englisch.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3838369386 ISBN 13: 9783838369389
Da: moluna, Greven, Germania
EUR 41,05
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Vijayagopal RamprasadR. Vijayagopal received his masters degree in electrical engineering from the University of Nevada in 2004 and the University of Minnesota in 2006. His graduate thesis work at the University of Nevada has been.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing Jun 2010, 2010
ISBN 10: 3838369386 ISBN 13: 9783838369389
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 104 pp. Englisch.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2010
ISBN 10: 3838369386 ISBN 13: 9783838369389
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 49,00
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Molecular Beam Epitaxy (MBE) is a process by which semiconductor films are grown on the substrate by physical vapor deposition of the source material in an ultra high vacuum environment. Spatial variations in flux are a result of the shape of the crucible and the geometry of the growth chamber. A process simulation tool for MBE based on a phenomenological model is proposed and elaborated. The tool can be used in industry to simulate the effusion and deposition of molecular beams by taking into account different parameters that influence the process. Additionally, it can generate deposition profiles created by effusing flux species, on the platen containing the wafers.