Isbn: 9780471396970 - mosfet models for spice simulation: including bsim3v3 and bsim4 (23 risultati)

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Hardback. Condizione: New. Beim integrierten Schaltkreisdesign spielt die Schaltkreissimulation eine wesentliche Rolle, wobei deren Genauigkeit von der Genauigkeit des verwendeten Transistormodells abhängig ist. BSIM3 (BSIM steht für Berkley Short-channel IGFET Model) wurde als erstes MOSFET Modell zur Standardisierung ausgewählt. Es wird erwartet, daß in den kommenden Jahren viele Halbleiterunternehmen zu BSIM3 wechseln. Dieses Buch erläutert die technischen Einzelheiten von BSIM 3, warum sich die meisten Unternehmen für dieses Modell entscheiden und wo es eingesetzt werden kann. Eines der fünf Kapitel widmet sich BSIM4, dem Nachfolgemodell von BSIM3.…

Condizione: New. An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Num Pages: 600 pages, index. BIC Classification: UMZ; UYF. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 238 x 163 x 39. Weight in Grams: 994. . 2001. 1st Edition. Hardcover. . . . .…

Gebunden. Condizione: New. WILLIAM LIU, PhD, is a senior member of the technical staff at Texas Instruments, where he has worked since obtaining his PhD in electrical engineering from Stanford University in 1991. Dr. Liu has been TI s lead contact in mentoring the development of BSIM.

Hardcover. Condizione: Brand New. 1st edition. 600 pages. 9.25x6.00x1.50 inches. In Stock.

Condizione: New. pp. xii + 588.

Hardback. Condizione: New. Beim integrierten Schaltkreisdesign spielt die Schaltkreissimulation eine wesentliche Rolle, wobei deren Genauigkeit von der Genauigkeit des verwendeten Transistormodells abhängig ist. BSIM3 (BSIM steht für Berkley Short-channel IGFET Model) wurde als erstes MOSFET Modell zur Standardisierung ausgewählt. Es wird erwartet, daß in den kommenden Jahren viele Halbleiterunternehmen zu BSIM3 wechseln. Dieses Buch erläutert die technischen Einzelheiten von BSIM 3, warum sich die meisten Unternehmen für dieses Modell entscheiden und wo es eingesetzt werden kann. Eines der fünf Kapitel widmet sich BSIM4, dem Nachfolgemodell von BSIM3.…

Condizione: New. An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Num Pages: 600 pages, index. BIC Classification: UMZ; UYF. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 238 x 163 x 39. Weight in Grams: 994. . 2001. 1st Edition. Hardcover. . . . . Books ship from the US and Ireland.…

Buch. Condizione: Neu. Neuware - Beim integrierten Schaltkreisdesign spielt die Schaltkreissimulation eine wesentliche Rolle, wobei deren Genauigkeit von der Genauigkeit des verwendeten Transistormodells abhängig ist. BSIM3 (BSIM steht für Berkley Short-channel IGFET Model) wurde als erstes MOSFET Modell zur Standardisierung ausgewählt. Es wird erwartet, daß in den kommenden Jahren viele Halbleiterunternehmen zu BSIM3 wechseln.Dieses Buch erläutert die technischen Einzelheiten von BSIM 3, warum sich die meisten Unternehmen für dieses Modell entscheiden und wo es eingesetzt werden kann. Eines der fünf Kapitel widmet sich BSIM4, dem Nachfolgemodell von BSIM3.…

Condizione: New. pp. xii + 588 Illus. This item is printed on demand.

Hardcover. Condizione: new. Hardcover. An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 componentsRepresents the BSIM3 model with equivalent circuits for various operating conditionsProvides a comprehensive glossary of modeling terminologyLists alphabetically BSIM3 parameters along with their meanings and relevant equationsExplores BSIM3's flaws and provides improvement suggestionsDescribes all of BSIM4's improvements and new featuresProvides useful SPICE files, which are available online at the Wiley ftp site An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.…

Hardcover. Condizione: Brand New. 1st edition. 600 pages. 9.25x6.00x1.50 inches. In Stock. This item is printed on demand.