Lingua: Inglese
Editore: Cambridge University Press, 2010
ISBN 10: 0521449642 ISBN 13: 9780521449649
Da: Lucky's Textbooks, Dallas, TX, U.S.A.
EUR 165,52
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, 2010
ISBN 10: 0521449642 ISBN 13: 9780521449649
Da: California Books, Miami, FL, U.S.A.
EUR 187,16
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge, 2010
ISBN 10: 0521449642 ISBN 13: 9780521449649
Da: Grand Eagle Retail, Bensenville, IL, U.S.A.
Hardcover. Condizione: new. Hardcover. If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research. If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresistance effect devices, and provides invaluable problem-solving insights from real-world case studies. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Lingua: Inglese
Editore: Cambridge University Press CUP, 2010
ISBN 10: 0521449642 ISBN 13: 9780521449649
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. 208.
EUR 244,94
Quantità: 2 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 208 pages. 9.70x7.00x0.60 inches. In Stock.
Da: Revaluation Books, Exeter, Regno Unito
EUR 191,84
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: Brand New. 1st edition. 208 pages. 9.70x7.00x0.60 inches. In Stock. This item is printed on demand.
Lingua: Inglese
Editore: Cambridge University Press, 2010
ISBN 10: 0521449642 ISBN 13: 9780521449649
Da: Majestic Books, Hounslow, Regno Unito
EUR 215,25
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 208 150 Illus.
Lingua: Inglese
Editore: Cambridge University Press, 2010
ISBN 10: 0521449642 ISBN 13: 9780521449649
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 228,31
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 208.
Da: moluna, Greven, Germania
EUR 192,54
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresis.
Lingua: Inglese
Editore: Cambridge University Press, Cambridge, 2010
ISBN 10: 0521449642 ISBN 13: 9780521449649
Da: CitiRetail, Stevenage, Regno Unito
EUR 215,21
Quantità: 1 disponibili
Aggiungi al carrelloHardcover. Condizione: new. Hardcover. If you are a semiconductor engineer or a magnetics physicist developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and how they are related to memory performance, characterization methods of magnetic films, and tunneling magnetoresistance effect devices. It also covers memory cell options, array architecture, circuit models, and read-write engineering issues. You'll understand the soft fail nature of magnetic memory, which is very different from that of semiconductor memory, as well as methods to deal with the issue. You'll also get invaluable problem-solving insights from real-world memory case studies. This is an essential book for semiconductor engineers who need to understand magnetics, and for magnetics physicists who work with MRAM. It is also a valuable reference for graduate students working in electronic/magnetic device research. If you are involved in developing magnetic memory, get the information you need with this, the first book on magnetic memory. From magnetics to the engineering design of memory, this practical book explains key magnetic properties and tunneling magnetoresistance effect devices, and provides invaluable problem-solving insights from real-world case studies. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability.