9780792385912 - Microscale Heat Conduction in Integrated Circuits and Their Constituent Films: 6 di Sungtaek Ju, Y.; Goodson, Kenneth E. (17 risultati)

Condizione: New. In.

Condizione: New.

Condizione: New.

Condizione: New. pp. 132.

Condizione: New. Discusses experimental and theoretical studies of heat transfer in transistors and interconnects. This book reports techniques for determining the thermal transport properties of dielectric passivation layers and ultra-thin silicon-on-insulator (SOI) layers. Series: Microsystems. Num Pages: 123 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 9. Weight in Grams: 810. . 1999. Hardback. . . . .

Condizione: New. Discusses experimental and theoretical studies of heat transfer in transistors and interconnects. This book reports techniques for determining the thermal transport properties of dielectric passivation layers and ultra-thin silicon-on-insulator (SOI) layers. Series: Microsystems. Num Pages: 123 pages, biography. BIC Classification: TJFD5. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly; (UU) Undergraduate. Dimension: 234 x 156 x 9. Weight in Grams: 810. . 1999. Hardback. . . . . Books ship from the US and Ireland.

Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Advances in the semiconductor technology have enabled steady, exponential im provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films.

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Hardcover. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

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Condizione: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | Advances in the semiconductor technology have enabled steady, exponential im­ provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni­ tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result­ ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de­ termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore­ flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon­ nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films.

Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Advances in the semiconductor technology have enabled steady, exponential im provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films. 132 pp. Englisch.

Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Preface. Foreword. Acknowledgements. Nomenclature. 1. Introduction. 2. Review of Microscale Thermometry Techniques. 3. High Spatial and Temporal Resolution Thermometry. 4. Thermal Properties of Amorphous Dielectric Films. 5. Heat Conduction in Crystalli.

Condizione: New. Print on Demand pp. 132 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.

Condizione: New. PRINT ON DEMAND pp. 132.

Buch. Condizione: Neu. Microscale Heat Conduction in Integrated Circuits and Their Constituent Films | Y. Sungtaek Ju (u. a.) | Buch | Microsystems | xxi | Englisch | 1999 | Springer | EAN 9780792385912 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.

Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Advances in the semiconductor technology have enabled steady, exponential im provement in the performance of integrated circuits. Miniaturization allows the integration of a larger number of transistors with enhanced switching speed. Novel transistor structures and passivation materials diminish circuit delay by minimizing parasitic electrical capacitance. These advances, however, pose several challenges for the thermal engineering of integrated circuits. The low thermal conductivities of passivation layers result in large temperature rises and temperature gradient magni tudes, which degrade electrical characteristics of transistors and reduce lifetimes of interconnects. As dimensions of transistors and interconnects decrease, the result ing changes in current density and thermal capacitance make these elements more susceptible to failure during brief electrical overstress. This work develops a set of high-resolution measurement techniques which de termine temperature fields in transistors and interconnects, as well as the thermal properties of their constituent films. At the heart of these techniques is the thermore flectance thermometry method, which is based on the temperature dependence of the reflectance of metals. Spatial resolution near 300 nm and temporal resolution near IOns are demonstrated by capturing transient temperature distributions in intercon nects and silicon-on-insulator (SOl) high-voltage transistors. Analyses of transient temperature data obtained from interconnect structures yield thermal conductivities and volumetric heat capacities of thin films.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 132 pp. Englisch.