9780792395201 - ion implantation: basics to device fabrication: 293 di rimini, emanuele (13 risultati)
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Hardcover. Condizione: New. In shrink wrap. Looks like an interesting title.
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Condizione: New. A collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Series: The Springer International Series in Engineering and Computer Scie…nce. Num Pages: 393 pages, biography. BIC Classification: PHF; TD. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 23. Weight in Grams: 752. . 1994. Hardback. . . . .
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condizione: New. pp. 412.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor… materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
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Da: Kennys Bookstore, Olney, MD, U.S.A.Kennys Bookstore
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Condizione: New. A collection of research dealing with several aspects of ion implantation, including basic information on the physics of devices, ion implanters, channeling implants, yield, damage and its annealing, in addition to a host of other topics. Series: The Springer International Series in Engineering and Computer Scie…nce. Num Pages: 393 pages, biography. BIC Classification: PHF; TD. Category: (P) Professional & Vocational; (UP) Postgraduate, Research & Scholarly. Dimension: 234 x 156 x 23. Weight in Grams: 752. . 1994. Hardback. . . . . Books ship from the US and Ireland.
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Da: moluna, Greven, Germaniamoluna
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the un…ique procedure to selectively dope semiconductor ma.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively do…pe semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject. 408 pp. Englisch.
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Da: preigu, Osnabrück, Germaniapreigu
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Buch. Condizione: Neu. Ion Implantation: Basics to Device Fabrication | Emanuele Rimini | Buch | xiii | Englisch | 1994 | Springer | EAN 9780792395201 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope s…emiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 408 pp. Englisch.
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Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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Condizione: New. Print on Demand pp. 412 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND pp. 412.
