9780898382778 - computer-aided design and vlsi device development: 53 di kit man cham; soo-young oh; moll, john l.; keunmyung lee; vandevoorde, paul (10 risultati)
Computer-Aided Design and VLSI Device Development
Kit Man Cham; Soo-Young Oh; Moll, John L.; Keunmyung Lee; Vandevoorde, Paul
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Computer-Aided Design and VLSI Device Development (The Springer International Series in Engineering and Computer Science, 53)
Kit Man Cham; Soo-Young Oh; Moll, John L.; Keunmyung Lee; Vandevoorde, Paul
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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Condizione: New. pp. 400 2nd Edition.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulati…on programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.
Computer-Aided Design and VLSI Device Development (The Springer International Series in Engineering and Computer Science, 53)
Kit Man Cham, Soo-Young Oh, Moll, John L., Keunmyung Lee, Va
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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Hardcover. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Computer-Aided Design and VLSI Device Development
Kit Man Cham|Soo-Young Oh|John L. Moll|Keunmyung Lee|Paul Vandevoorde
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Da: moluna, Greven, Germaniamoluna
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public doma…in (with the exception of the parasitic simulation .
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasi…tic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 398 pp. Englisch.
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Condizione: New. Print on Demand pp. 400 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND pp. 400.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the pa…rasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs. 398 pp. Englisch.
