Isbn: 9781032670263 - advanced mos devices and their circuit applications (14 risultati)

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  • Lingua: Inglese

    Editore: CRC Press, 2025

    1032670266 / 9781032670263

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  • Lingua: Inglese

    Editore: CRC Press, 2025

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  • Lingua: Inglese

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  • Lingua: Inglese

    Editore: CRC Press, 2025

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  • Lingua: Inglese

    Editore: CRC Press, 2025

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  • Lingua: Inglese

    Editore: CRC Press, 2025

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  • Lingua: Inglese

    Editore: CRC Press, 2025

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  • Lingua: Inglese

    Editore: CRC Press, 2025

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    Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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  • Lingua: Inglese

    Editore: CRC Press, 2025

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  • Lingua: Inglese

    Editore: CRC Pr I Llc, 2025

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    Paperback. Condizione: Brand New. 160 pages. 9.18x6.12x9.21 inches. In Stock.

  • Lingua: Inglese

    Editore: Taylor & Francis Ltd, London, 2025

    1032670266 / 9781032670263

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    Paperback. Condizione: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability. …

  • Lingua: Inglese

    Editore: Taylor & Francis Ltd, London, 2025

    1032670266 / 9781032670263

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    Paperback. Condizione: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. …

  • Lingua: Inglese

    Editore: Taylor & Francis Ltd, London, 2025

    1032670266 / 9781032670263

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    Da: AussieBookSeller, Truganina, VIC, AustraliaAussieBookSeller

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    EUR 78,46

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    Paperback. Condizione: new. Paperback. This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach.The book:Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs)Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applicationsExamines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistorsIncludes research problem statements with specifications and commercially available industry data in the appendixPresents Verilog-A model-based simulations for circuit analysisThe volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology. The text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will investigate in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. This item is printed on demand. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability. …