9781402034732 - zinc oxide: a material for micro- and optoelectronic applications: proceedings of the nato advanced research workshop on zinc oxide as a material for ... russia, from 23 to 25 june 2004: 194 (15 risultati)
Lingua: Inglese
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Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requirements of st…ate-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV.
Lingua: Inglese
Editore: Springer, 2005
Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological re…quirements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on 'Zinc oxide as a material for micro- and optoelectronic applications', held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 - 40 meV and 60 - 70 meV. 256 pp. Englisch.
Lingua: Inglese
Editore: Springer Netherlands, 2005
Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Latest research results on the fabrication and fundamental understanding of ZnO and ZnO based devicesZnO bulk and layer growth of undoped and p-type doped material, influence of impurities (oxygen, hydrogen…, transition metals) on electrical and op.
Altre immaginiLingua: Inglese
Editore: Springer, 2005
Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Buch. Condizione: Neu. Zinc Oxide - A Material for Micro- and Optoelectronic Applications | Proceedings of the NATO Advanced Research Workshop on Zinc Oxide as a Material for Micro- and Optoelectronic Applications, held in St. Petersburg, Russia, from 23 to 25 June 2004 | Norbert H. Nickel (u. a.) | Buch | xvi | Englisch | 2005…| Springer | EAN 9781402034732 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand.
Lingua: Inglese
Editore: Springer, Springer Aug 2005, 2005
Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Recently, a significant effort has been devoted to the investigation of ZnO as a suitable semiconductor for UV light-emitting diodes, lasers, and detectors and hetero-substrates for GaN. Research is driven not only by the technological requir…ements of state-of-the-art applications but also by the lack of a fundamental understanding of growth processes, the role of intrinsic defects and dopants, and the properties of hydrogen. The NATO Advanced Research Workshop on ¿Zinc oxide as a material for micro- and optoelectronic applications¿, held from June 23 to June 25 2004 in St. Petersburg, Russia, was organized accordingly and started with the growth of ZnO. A variety of growth methods for bulk and layer growth were discussed. These techniques comprised growth methods such as closed space vapor transport (CSVT), metal-organic chemical vapor deposition, reactive ion sputtering, and pulsed laser deposition. From a structural point of view using these growth techniques ZnO can be fabricated ranging from single crystalline bulk material to polycrystalline ZnO and nanowhiskers. A major aspect of the ZnO growth is doping. n-type doping is relatively easy to accomplish with elements such al Al or Ga. At room temperature single crystal ZnO exhibits a resistivity of about 0. 3 -cm, an electron mobility of 2 17 -3 225 cm /Vs, and a carrier concentration of 10 cm . In n-type ZnO two shallow donors are observable with activation energies of 30 ¿ 40 meV and 60 ¿ 70 meV.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 256 pp. Englisch.
Lingua: Inglese
Editore: Springer, 2005
Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Condizione: New. Print on Demand pp. 260 52:B&W 6.14 x 9.21in or 234 x 156mm (Royal 8vo) Case Laminate on White w/Gloss Lam.
Lingua: Inglese
Editore: Springer, 2005
Serie: NATO Science Series II: Mathematics, Physics and Chemistry, Libro 119 di 241. Libro 119 di 241 - NATO Science Series II: Mathematics, Physics and Chemistry
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Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND pp. 260.
