Isbn: 9781461283010 - the physics and technology of amorphous sio2 (13 risultati)

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  • Lingua: Inglese

    Editore: Springer, 2011

    1461283019 / 9781461283010

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  • Lingua: Inglese

    Editore: Springer, 2011

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    Condizione: New. In English.

  • Lingua: Inglese

    Editore: Springer, 2011

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    Condizione: New. pp. 596.

  • Lingua: Inglese

    Editore: Springer, 2011

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    Taschenbuch. Condizione: Neu. The Physics and Technology of Amorphous SiO2 | Roderick A. B. Devine | Taschenbuch | xii | Englisch | 2011 | Springer | EAN 9781461283010 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

  • Lingua: Inglese

    Editore: Springer Verlag, 2011

    1461283019 / 9781461283010

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    Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books

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    Paperback. Condizione: Brand New. 591 pages. 9.70x6.70x1.20 inches. In Stock.

  • Lingua: Inglese

    Editore: Springer, 2011

    1461283019 / 9781461283010

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.

  • Lingua: Inglese

    Editore: Springer, 2011

    1461283019 / 9781461283010

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    Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books

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    Paperback. Condizione: Like New. Like New. book.

  • Lingua: Inglese

    Editore: Springer, 2011

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    Condizione: new. Questo è un articolo print on demand.

  • Lingua: Inglese

    Editore: Springer Okt 2011, 2011

    1461283019 / 9781461283010

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections. 596 pp. Englisch.

  • Lingua: Inglese

    Editore: Springer US, 2011

    1461283019 / 9781461283010

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    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specia.

  • Lingua: Inglese

    Editore: Springer, 2011

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    Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

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    Condizione: New. Print on Demand pp. 596.

  • Lingua: Inglese

    Editore: Springer, 2011

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    Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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    Condizione: New. PRINT ON DEMAND pp. 596.

  • Lingua: Inglese

    Editore: Springer, Springer Okt 2011, 2011

    1461283019 / 9781461283010

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    Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The contents of this volume represent most of the papers presented either orally or as posters at the international conference held in Les rd th Arcs, Savoie, from June 29 to July 3 1987. The declared objective of the conference was to bring together specialists working in various fields, both academic and applied, to examine the state of our under standing of the physics of amorphous sioz from the point of view of its structure, defects (both intrinsic and extrinsic), its ability to trans port current and to trap charges, its sensitivity to irradiation, etc. For this reason, the proceedings is divided, as was the conference schedule, into a number of sections starting from a rather academic viewpoint of the internal structure of idealized Si0 and progressing 2 towards subjects of increasing technological importance such as charge transport and trapping and breakdown in thin films. The proceedings terminates with a section on novel applications of amorphous SiOz and in particular, buried oxide layers formed by ion implantation. Although every effort was made at the conference to ensure that each presentation occured in its most obvious session, in editing the proceedings we have taken the liberty of changing the order where it seems that a paper was in fact more appropriate to an alternative section. In any event, because of the natural overlap of subjects, many papers could have been suitably placed in several different sections.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 596 pp. Englisch.