Isbn: 9781468490718 - radiation effects in semiconductors and semiconductor devices (14 risultati)

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  • Lingua: Inglese

    Editore: Springer, 2012

    1468490710 / 9781468490718

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  • Lingua: Inglese

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  • Lingua: Inglese

    Editore: Springer 2012-11-26, 2012

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  • Lingua: Inglese

    Editore: Springer, 2012

    1468490710 / 9781468490718

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    Condizione: New. pp. 284.

  • Lingua: Inglese

    Editore: Springer, 2012

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    Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books

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    Paperback. Condizione: Brand New. reprint edition. 280 pages. 8.50x5.51x0.64 inches. In Stock.

  • Lingua: Inglese

    Editore: Springer, Springer, 2012

    1468490710 / 9781468490718

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - one.- I The Theory of the Formation and Nature of Radiation-Induced Defects.- II Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by Irradiation.- III Ionization in Semiconductors as a Result of the Stopping of Charged Particles, Absorption and Scattering of Photons.- Two.- I Radiation Effects in Transistors.- II Radiation Effects in Semiconductor Diodes.- III Effect of Pulsed Radiation on Semiconductor Devices.

  • Lingua: Inglese

    Editore: Springer, 2012

    1468490710 / 9781468490718

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    Taschenbuch. Condizione: Neu. Radiation Effects in Semiconductors and Semiconductor Devices | V. S. Vavilov | Taschenbuch | 280 S. | Englisch | 2012 | Springer | EAN 9781468490718 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

  • Lingua: Inglese

    Editore: Springer, 2012

    1468490710 / 9781468490718

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    Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books

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    Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

  • Lingua: Inglese

    Editore: Springer, 2012

    1468490710 / 9781468490718

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    Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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    Condizione: new. Questo è un articolo print on demand.

  • Lingua: Inglese

    Editore: Springer US Nov 2012, 2012

    1468490710 / 9781468490718

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -one.- I The Theory of the Formation and Nature of Radiation-Induced Defects.- 1. Production of Radiation Defects by Fast Electrons and -Rays.- 2. On the Production of Frenkel Defects in Diamond-type Lattices.- The 0 01 transition.- Displacement into point b [(2, 0, 0,), (0, 2, 0) or (0, 0, 2)].- 3. Defect Production by Neutrons and by Heavy Charged Particles.- 4. Defect Production by Ionization Processes.- II Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by Irradiation.- 1. Threshold Energy of Defect Production in Germanium, Silicon and Other Semiconductors.- 2. Optical and Photoelectric Investigation of Radiation-Induced Defects.- Photoconductivity Spectra.- Photoconductivity relaxation.- 3. Investigation of Defects by Electron Paramagnetic Resonance (EPR) and by Measurement of Changes in the Magnetic Properties.- E-centers.- J- and C-centers.- B-centers.- 4. Interaction of Radiation-Induced Defects with Impurities.- Energy spectrum of radiation-induced defects in silicon.- Radiation defects in lithium-doped silicon 60 Radiation-induced defects in pure germanium and in gold-doped germanium.- 5. Stability and Annealing of Radiation Defects in Semiconductors.- Low-temperature irradiation and annealing.- 6. The Influence of Defect Clusters, Produced by Fast Neutrons and Heavy Charged Particles, on the Properties of Semiconductors.- 7. Structural Investigation of Radiation Defects in Semiconductors.- Data on isolated (point) defects.- Radiation-induced defect clusters in germanium and silicon.- Radiation-induced defect clusters in semiconductor compounds of the AIII BV type.- Electron microscopy methods.- 8. Influence of Radiation Defects on the Thermal Conductivity of Semiconductors.- 9. Radiation Doping of Semiconductors.- Ion implantation of dopants.- ¿Channeling ¿ of charged particles in crystals.- Doping by nuclear reactions (transmutation doping).- III Ionization in Semiconductors as a Result of the Stopping of Charged Particles, Absorption and Scattering of Photons.- 1. Energy Losses on Ionization.- Energy losses by charged particles.- Ionization as a result of absorption and scattering of -radiation and X-rays.- 2. Mean Ionization Energy in Semiconductors.- 3. Energy Consumed in the Ionization and Excitation of Lattice Vibrations.- Two.- I Radiation Effects in Transistors.- 1. Experimental Determination of the Properties of Irradiated Transistors.- 2. Main Functions Determining the Rate of Change of Transistor Parameters as a Result of Bulk Processes. Criteria of Radiation Stability of Transistors.- 3. Behavior of Transistors Irradiated with Large Doses.- 4. Effect of Recombination at p-n Junctions on the Current Transport Coefficient of Transistors.- 5. Dependence of Radiation-Induced Changes in the Lifetime of Minority Carriers on the Electrophysical Properties of Irradiated Semiconductor Materials.- Germanium.- Silicon.- 6. Surface Effects in Irradiated Transistors.- 7. Influence of Operating Conditions and Irradiation Temperature on the Radiation Stability of Transistors.- 8. Some Problems of Thyristor Operation Under Irradiation.- II Radiation Effects in Semiconductor Diodes.- 1. Stable Radiation-Induced Changes in the Forward Branch of the V-I Characteristics of Diodes.- 2. Experimental Data on Changes in the Conductivity of Germanium and Silicon upon Irradiation.- 3. Radiation-Induced Changes in the Reverse V-I Characteristics of Diodes.- 4. Effect of Radiation on the Parameters of ¿Stabilitrons¿.- III Effect of Pulsed Radiation on Semiconductor Devices.- 1. Characteristics of Pulsed Irradiation of Semiconductor Devices.- 2. Ionization Current in p-n Junctions.- 3. Equivalent Diode Circuit Modelling Diode Response to Ionizing Radiation Pulses.- 4. Response of Transistors to Ionizing Radiation Pulses and Equivalent Circuits.- 5. Experimental Data on the Effect of Pulsed Radiation on Semiconductor.

  • Lingua: Inglese

    Editore: Springer, 2012

    1468490710 / 9781468490718

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    Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

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    Condizione: New. Print on Demand pp. 284 22:B&W 5.5 x 8.5 in or 216 x 140 mm (Demy 8vo) Perfect Bound on White w/Gloss Lam.

  • Lingua: Inglese

    Editore: Springer, 2012

    1468490710 / 9781468490718

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    Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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    Condizione: New. PRINT ON DEMAND pp. 284.

  • Lingua: Inglese

    Editore: Springer US, 2012

    1468490710 / 9781468490718

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    Da: moluna, Greven, Germaniamoluna

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    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. one.- I The Theory of the Formation and Nature of Radiation-Induced Defects.- 1. Production of Radiation Defects by Fast Electrons and ?-Rays.- 2. On the Production of Frenkel Defects in Diamond-type Lattices.- The 0 ? 01 transition.- Displacement into poin.

  • Lingua: Inglese

    Editore: Springer, Springer Nov 2012, 2012

    1468490710 / 9781468490718

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    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -one.- I The Theory of the Formation and Nature of Radiation-Induced Defects.- II Experimental Study of Radiation Defects in Semiconductors and Control of Semiconductor Properties by Irradiation.- III Ionization in Semiconductors as a Result of the Stopping of Charged Particles, Absorption and Scattering of Photons.- Two.- I Radiation Effects in Transistors.- II Radiation Effects in Semiconductor Diodes.- III Effect of Pulsed Radiation on Semiconductor Devices.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 284 pp. Englisch.