Isbn: 9781785613654 - high frequency mosfet gate drivers: technologies and applications (17 risultati)

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: Marlton Books, Bridgeton, NJ, U.S.A.Marlton Books
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Buono
EUR 101,21
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Condizione: Good. Has some wear and creases. Has a remainder mark. hardcover Used - Good 2017.

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
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Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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EUR 142,09
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Condizione: New.

Lingua: Inglese
Editore: Institution of Engineering and Technology, GB, 2017
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Da: Rarewaves USA, HEBRON, KY, U.S.A.Rarewaves USA
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EUR 144,51
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Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: California Books, Miami, FL, U.S.A.California Books
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EUR 148,29
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Condizione: New.

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Come nuovo
EUR 146,60
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Condizione: As New. Unread book in perfect condition.

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
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EUR 138,27
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Condizione: New.

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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EUR 149,85
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Condizione: New. In English.

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Come nuovo
EUR 151,05
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Condizione: As New. Unread book in perfect condition.

Lingua: Inglese
Editore: Institution of Engineering and Technology, GB, 2017
- Rilegato
Da: Rarewaves.com USA, London, LONDO, Regno UnitoRarewaves.com USA
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EUR 172,69
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Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

Lingua: Inglese
Editore: Institution of Engineering and Technology, GB, 2017
- Rilegato
Da: Rarewaves USA United, HEBRON, KY, U.S.A.Rarewaves USA United
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 145,90
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Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

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Da: moluna, Greven, Germaniamoluna
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EUR 148,00
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Gebunden. Condizione: New. Über den AutorrnrnZhiLiang Zhang is a Professor at the Aero-Power Sci-Tech Center of Nanjing University of Aeronautics and Astronautics, China. His research interests include high-frequency power converters and renewable energy power con.

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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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EUR 195,87
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Hardcover. Condizione: Brand New. 296 pages. 9.50x6.25x1.00 inches. In Stock.

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: Books Puddle, Woodside, NY, U.S.A.Books Puddle
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EUR 234,63
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Condizione: New.

Lingua: Inglese
Editore: Institution of Engineering and Technology, GB, 2017
- Rilegato
Da: Rarewaves.com UK, London, Regno UnitoRarewaves.com UK
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 168,74
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Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2017
- Rilegato
Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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EUR 244,67
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Condizione: New.

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Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK
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HRD. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

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Da: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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HRD. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.