Isbn: 9781785613654 - high frequency mosfet gate drivers: technologies and applications (17 risultati)

Perfeziona la tua ricerca

  • Libri (17)

a

Fascia di prezzo personalizzata (EUR)

a

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Marlton Books, Bridgeton, NJ, U.S.A.Marlton Books

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Usato - Buono

    EUR 101,21

    EUR 2,67 spedizione 
    Spedito in U.S.A.

    Quantità: 2 disponibili

    Condizione: Good. Has some wear and creases. Has a remainder mark. hardcover Used - Good 2017.

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 142,09

    EUR 2,35 spedizione 
    Spedito in U.S.A.

    Quantità: Più di 20 disponibili

    Condizione: New.

  • Lingua: Inglese

    Editore: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Rarewaves USA, HEBRON, KY, U.S.A.Rarewaves USA

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 144,51

     Spedizione gratuita 
    Spedito in U.S.A.

    Quantità: Più di 20 disponibili

    Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: California Books, Miami, FL, U.S.A.California Books

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 148,29

     Spedizione gratuita 
    Spedito in U.S.A.

    Quantità: Più di 20 disponibili

    Condizione: New.

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Usato - Come nuovo

    EUR 146,60

    EUR 2,35 spedizione 
    Spedito in U.S.A.

    Quantità: Più di 20 disponibili

    Condizione: As New. Unread book in perfect condition.

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 138,27

    EUR 17,65 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: Più di 20 disponibili

    Condizione: New.

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 149,85

    EUR 13,28 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: Più di 20 disponibili

    Condizione: New. In English.

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Usato - Come nuovo

    EUR 151,05

    EUR 17,65 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: Più di 20 disponibili

    Condizione: As New. Unread book in perfect condition.

  • Lingua: Inglese

    Editore: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Rarewaves.com USA, London, LONDO, Regno UnitoRarewaves.com USA

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 172,69

     Spedizione gratuita 
    Spedito da Regno Unito a U.S.A.

    Quantità: Più di 20 disponibili

    Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Lingua: Inglese

    Editore: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Rarewaves USA United, HEBRON, KY, U.S.A.Rarewaves USA United

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 145,90

    EUR 44,44 spedizione 
    Spedito in U.S.A.

    Quantità: Più di 20 disponibili

    Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Lingua: Inglese

    Editore: INSTITUTION OF ENGINEERING & T, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: moluna, Greven, Germaniamoluna

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 148,00

    EUR 48,99 spedizione 
    Spedito da Germania a U.S.A.

    Quantità: Più di 20 disponibili

    Gebunden. Condizione: New. &Uumlber den AutorrnrnZhiLiang Zhang is a Professor at the Aero-Power Sci-Tech Center of Nanjing University of Aeronautics and Astronautics, China. His research interests include high-frequency power converters and renewable energy power con.

  • Lingua: Inglese

    Editore: Inst of Engineering & Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 195,87

    EUR 14,71 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: 2 disponibili

    Hardcover. Condizione: Brand New. 296 pages. 9.50x6.25x1.00 inches. In Stock.

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Books Puddle, Woodside, NY, U.S.A.Books Puddle

    Venditore con 4 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 234,63

    EUR 3,55 spedizione 
    Spedito in U.S.A.

    Quantità: 1 disponibile

    Condizione: New.

  • Lingua: Inglese

    Editore: Institution of Engineering and Technology, GB, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Rarewaves.com UK, London, Regno UnitoRarewaves.com UK

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 168,74

    EUR 76,48 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: Più di 20 disponibili

    Hardback. Condizione: New. This book describes high frequency power MOSFET gate driver technologies, including gate drivers for GaN HEMTs, which have great potential in the next generation of switching power converters. Gate drivers serve as a critical role between control and power devices. In recent years, there has been a trend to increase the switching frequency beyond multi-MHz in switching power converters to reduce the passive components and significantly improve power density. However, this results in high switching loss and gate driver loss in power MOSFETs. The novel approach in this book is the proposed Current Source Gate Driver (CSD) including different topologies, control and applications. The CSD can reduce the switching transition time and switching loss significantly, and recover high frequency gate driver loss compared to conventional voltage gate drivers. The basic idea can also be extended to other power devices to improve high frequency switching performance such as SiC MOSFET and IGBT. Topics covered in the book include the state-of-the-art of power MOSFET drive techniques, the switching loss model, current source gate drivers (CSDs), resonant gate drivers, adaptive gate drivers and GaN HEMT gate drivers. The book is essential reading for design engineers, researchers and advanced students working in switching power supplies and in power electronics generally.…

  • Lingua: Inglese

    Editore: The Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato

    Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

    Venditore con 4 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 244,67

    EUR 7,65 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: 1 disponibile

    Condizione: New.

  • Lingua: Inglese

    Editore: Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato
    • Print on Demand

    Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 138,28

    EUR 5,91 spedizione 
    Spedito da Regno Unito a U.S.A.

    Quantità: Più di 20 disponibili

    HRD. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.

  • Lingua: Inglese

    Editore: Institution of Engineering and Technology, 2017

    1785613650 / 9781785613654

    • Rilegato
    • Print on Demand

    Da: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US

    Venditore con 5 stelle
    Contatta il venditore

    Condizione: Nuovo

    EUR 145,26

     Spedizione gratuita 
    Spedito in U.S.A.

    Quantità: Più di 20 disponibili

    HRD. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.