9781849199971 - nano-cmos and post-cmos electronics: devices and modelling: volume 1 (16 risultati)
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
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Da: Marlton Books, Bridgeton, NJ, U.S.A.Marlton Books
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EUR 59,56
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Condizione: Very Good. Good shape with typical wear. Has a remainder mark. hardcover Used - Very Good 2016.
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
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Da: Recycle Bookstore, San Jose, CA, U.S.A.Recycle Bookstore
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EUR 63,23
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Hardcover. Condizione: Very Good. Boook has a significant bump at the top of the back cover, with minor rubbing to the covers, and minor wear at the edges and corners, leaving it in great condition. Its well-bound with bright ages that are crisp and unmarked.
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
- Rilegato
Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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EUR 134,19
EUR 2,32 spedizioneSpedito in U.S.A.Quantità: Più di 20 disponibili
Condizione: New.
- Altre immagini
Lingua: Inglese
Editore: Institution of Engineering and Technology, GB, 2016
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Da: Rarewaves USA, OSWEGO, IL, U.S.A.Rarewaves USA
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EUR 136,59
Spedizione gratuitaSpedito in U.S.A.Quantità: Più di 20 disponibili
Hardback. Condizione: New. The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a… limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
- Rilegato
Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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EUR 129,29
EUR 14,04 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. In English.
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
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Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
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EUR 129,27
EUR 17,58 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Condizione: New.
- Altre immagini
Lingua: Inglese
Editore: Institution of Engineering and Technology, GB, 2016
- Rilegato
Da: Rarewaves USA United, OSWEGO, IL, U.S.A.Rarewaves USA United
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 137,18
EUR 43,88 spedizioneSpedito in U.S.A.Quantità: Più di 20 disponibili
Hardback. Condizione: New. The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, and is a… limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.
- Altre immagini
- Rilegato
Da: moluna, Greven, Germaniamoluna
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EUR 141,40
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. Inhaltsverzeichnisrnrnn Chapter 1: High-κ dielectrics and device reliabilityn Chapter 2: High mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arraysn Chapte.
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 183,86
EUR 14,65 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Hardcover. Condizione: Brand New. 368 pages. 9.25x6.25x1.00 inches. In Stock.
- Altre immagini
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
- Rilegato
Da: GreatBookPricesUK, Woodford Green, Regno UnitoGreatBookPricesUK
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Come nuovo
EUR 196,71
EUR 17,58 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Condizione: As New. Unread book in perfect condition.
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
- Rilegato
Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
Contatta il venditoreVenditore con 4 stelleCondizione: Usato - Come nuovo
EUR 187,06
EUR 29,29 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 1 disponibili
hardcover. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
- Altre immagini
Lingua: Inglese
Editore: The Institution of Engineering and Technology, 2016
- Rilegato
Da: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
Contatta il venditoreVenditore con 5 stelleCondizione: Usato - Come nuovo
EUR 219,97
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Condizione: As New. Unread book in perfect condition.
- Altre immagini
Lingua: Inglese
Editore: Institution Of Engineering And Technology Jan 2023, 2023
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 174,55
EUR 63,57 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Buch. Condizione: Neu. Neuware - The demand for ever smaller and portable electronic devices has driven metal oxide semiconductor-based (CMOS) technology to its physical limit with the smallest possible feature sizes. This presents various size-related problems such as high power leakage, low-reliability, and thermal effects, an…d is a limit on further miniaturization. To enable even smaller electronics, various nanodevices including carbon nanotube transistors, graphene transistors, tunnel transistors and memristors (collectively called post-CMOS devices) are emerging that could replace the traditional and ubiquitous silicon transistor. This book explores these nanoelectronics at the device level including modelling and design. Topics covered include high-k dielectrics; high mobility n and p channels on gallium arsenide and silicon substrates using interfacial misfit dislocation arrays; anodic metal-insulator-metal (MIM) capacitors; graphene transistors; junction and doping free transistors; nanoscale gigh-k/metal-gate CMOS and FinFET based logic libraries; multiple-independent-gate nanowire transistors; carbon nanotubes for efficient power delivery; timing driven buffer insertion for carbon nanotube interconnects; memristor modeling; and neuromorphic devices and circuits. This book is essential reading for researchers, research-focused industry designers/developers, and advanced students working on next-generation electronic devices and circuits.
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- Print on Demand
Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK
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EUR 131,40
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HRD. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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- Print on Demand
Da: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US
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HRD. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000.
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- Print on Demand
Da: THE SAINT BOOKSTORE, Southport, Regno UnitoTHE SAINT BOOKSTORE
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EUR 154,50
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Hardback. Condizione: New. This item is printed on demand. New copy - Usually dispatched within 5-9 working days.






