Isbn: 9781849968201 - charged semiconductor defects: structure, thermodynamics and diffusion (13 risultati)

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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.…

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Taschenbuch. Condizione: Neu. Charged Semiconductor Defects | Structure, Thermodynamics and Diffusion | Edmund G. Seebauer (u. a.) | Taschenbuch | Engineering Materials and Processes | xiv | Englisch | 2010 | Springer | EAN 9781849968201 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Details the current state of knowledge regarding the properties of ionized defects in advanced transistors, photo-active devices, catalysts, and sensorsEdmund Seebauer is currently Head of Chemical and Biomolecular Engineering.…

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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of 'defect engineering'. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. 'Charged Defects in Semiconductors' details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters. 308 pp. Englisch. …

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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of ¿defect engineering¿. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. ¿Charged Defects in Semiconductors¿ details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 308 pp. Englisch.…

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