Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 112,44
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Aggiungi al carrelloCondizione: New. In.
Da: California Books, Miami, FL, U.S.A.
EUR 128,53
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Aggiungi al carrelloCondizione: New.
Da: preigu, Osnabrück, Germania
EUR 95,70
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Parasitic Substrate Coupling in High Voltage Integrated Circuits | Minority and Majority Carriers Propagation in Semiconductor Substrate | Pietro Buccella (u. a.) | Taschenbuch | xvii | Englisch | 2019 | Springer | EAN 9783030089764 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Lingua: Inglese
Editore: Springer International Publishing, Springer International Publishing, 2019
ISBN 10: 3030089762 ISBN 13: 9783030089764
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 106,99
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools.The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits.The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis.Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits;Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate;Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices;Offers design guidelines to reduce couplings by adding specific protections.
Lingua: Inglese
Editore: Springer International Publishing, Springer International Publishing Feb 2019, 2019
ISBN 10: 3030089762 ISBN 13: 9783030089764
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 106,99
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Neuware -This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools.The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits.The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis.Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits;Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate;Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices;Offers design guidelines to reduce couplings by adding specific protections.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 204 pp. Englisch.
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 163,35
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Aggiungi al carrelloPaperback. Condizione: New. New. book.
Da: Brook Bookstore On Demand, Napoli, NA, Italia
EUR 86,24
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Aggiungi al carrelloCondizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer International Publishing Feb 2019, 2019
ISBN 10: 3030089762 ISBN 13: 9783030089764
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 106,99
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book introduces a new approach to model and predict substrate parasitic failures in integrated circuits with standard circuit design tools.The injection of majority and minority carriers in the substrate is a recurring problem in smart power ICs containing high voltage, high current switching devices besides sensitive control, protection and signal processing circuits.The injection of parasitic charges leads to the activation of substrate bipolar transistors. This book explores how these events can be evaluated for a wide range of circuit topologies. To this purpose, new generalized devices implemented in Verilog-A are used to model the substrate with standard circuit simulators. This approach was able to predict for the first time the activation of a latch-up in real circuits through post-layout SPICE simulation analysis.Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits;Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate;Uses Spice for simulation and characterization of parasitic bipolar transistors, latch-up of the parasitic p-n-p-n structure, and electrostatic discharge (ESD) protection devices;Offers design guidelines to reduce couplings by adding specific protections. 204 pp. Englisch.
Lingua: Inglese
Editore: Springer International Publishing, 2019
ISBN 10: 3030089762 ISBN 13: 9783030089764
Da: moluna, Greven, Germania
EUR 92,27
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Discusses substrate modeling and circuit-level simulation of parasitic bipolar device coupling effects in integrated circuits Includes circuit back-annotation of the parasitic lateral n-p-n and vertical p-n-p bipolar transistors in the substrate.