Isbn: 9783031009006 - compound semiconductor materials and devices (15 risultati)

Condizione: As New. Unread book in perfect condition.

Condizione: New.

Condizione: New.

Condizione: New. 1st edition NO-PA16APR2015-KAP.

Condizione: New. In English.

Condizione: New.

Condizione: As New. Unread book in perfect condition.

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.…

Taschenbuch. Condizione: Neu. Compound Semiconductor Materials and Devices | Zhaojun Liu (u. a.) | Taschenbuch | Synthesis Lectures on Emerging Engineering Technologies | vii | Englisch | 2016 | Springer | EAN 9783031009006 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Condizione: new. Questo è un articolo print on demand.

Condizione: New. Print on Demand.

Condizione: New. PRINT ON DEMAND.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices. 76 pp. Englisch.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Zhaojun Liu, Ph.D., is currently an assistant professor with Sun Yat-sen University-Carnegie Mellon University Joint Institute of Engineering (JIE) and Shunde International Joint Research Institute (JRI). He received the B.Eng. degree in Electrical Engineer.…

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate.With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 76 pp. Englisch.…