9783319349145 - toward quantum finfet: 17 (13 risultati)
Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Condizione: New. pp. 363.
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Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: preigu, Osnabrück, Germaniapreigu
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Taschenbuch. Condizione: Neu. Toward Quantum FinFET | Weihua Han (u. a.) | Taschenbuch | Lecture Notes in Nanoscale Science and Technology | xi | Englisch | 2016 | Springer | EAN 9783319349145 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com…| Anbieter: preigu.
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Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between qua…ntum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effectProvides the keys to understanding the emerging area of the quantum FinFETWritten by leading experts in each research areaDescribes a key enabling technology for research and development of nanofabrication and nanoelectronic devices.
Lingua: Inglese
Editore: Springer Verlag, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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Paperback. Condizione: Brand New. reprint edition. 376 pages. 9.25x6.10x0.89 inches. In Stock.
Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Condizione: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days. Excellent Customer Service.
Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
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Lingua: Inglese
Editore: Springer, Springer International Publishing Aug 2016, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental br…idge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effectProvides the keys to understanding the emerging area of the quantum FinFETWritten by leading experts in each research areaDescribes a key enabling technology for research and development of nanofabrication and nanoelectronic devices 376 pp. Englisch.
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Lingua: Inglese
Editore: Springer International Publishing, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a… fundamental bridge between quantum Fi.
Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
- Brossura
- Print on Demand
Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
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Condizione: New. Print on Demand pp. 363.
Lingua: Inglese
Editore: Springer, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
- Brossura
- Print on Demand
Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
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Condizione: New. PRINT ON DEMAND pp. 363.
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Lingua: Inglese
Editore: Springer International Publishing, Springer International Publishing Aug 2016, 2016
Serie: Libro 14 di 33 - Lecture Notes in Nanoscale Science and Technology
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- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge… between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design.Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effectProvides the keys to understanding the emerging area of the quantum FinFETWritten by leading experts in each research areaDescribes a key enabling technology for research and development of nanofabrication and nanoelectronic devicesSpringer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 376 pp. Englisch.
