9783319358901 - the thermoballistic transport model: a novel approach to charge carrier transport in semiconductors: 259 di lipperheide, reinhard; wille, uwe (11 risultati)
Lingua: Inglese
Editore: Springer, 2016
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
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The Thermoballistic Transport Model : A Novel Approach to Charge Carrier Transport in Semiconductors
Lingua: Inglese
Editore: Springer 2016-09, 2016
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Da: Chiron Media, Wallingford, Regno UnitoChiron Media
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The Thermoballistic Transport Model | A Novel Approach to Charge Carrier Transport in Semiconductors
Lingua: Inglese
Editore: Springer, 2016
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Da: preigu, Osnabrück, Germaniapreigu
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Taschenbuch. Condizione: Neu. The Thermoballistic Transport Model | A Novel Approach to Charge Carrier Transport in Semiconductors | Reinhard Lipperheide (u. a.) | Taschenbuch | Springer Tracts in Modern Physics | xi | Englisch | 2016 | Springer | EAN 9783319358901 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tierg…artenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
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The Thermoballistic Transport Model : A Novel Approach to Charge Carrier Transport in Semiconductors
Lingua: Inglese
Editore: Springer International Publishing, Springer International Publishing, 2016
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the opposing drift…-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of 'ballistic configurations' arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.
Lingua: Inglese
Editore: Springer Verlag, 2016
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
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Paperback. Condizione: Brand New. reprint edition. 164 pages. 9.25x6.10x0.37 inches. In Stock.
Lingua: Inglese
Editore: Springer, 2016
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Da: Mispah books, Redhill, SURRE, Regno UnitoMispah books
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Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: Springer, 2016
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Da: Basi6 International, Irving, TX, U.S.A.Basi6 International
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Condizione: Brand New. New. US edition. Print on demand title. Delivery takes 20-25 days. Excellent Customer Service.
Lingua: Inglese
Editore: Springer, 2016
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Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
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Condizione: new. Questo è un articolo print on demand.
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Lingua: Inglese
Editore: Springer International Publishing Sep 2016, 2016
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between th…e opposing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of 'ballistic configurations' arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out. 164 pp. Englisch.
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Lingua: Inglese
Editore: Springer International Publishing, 2016
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Presents the thermoballistic approach as a novel and original way of calculationsTreats specific examples of current research in semiconductor physics and spintronicsDevelops the formalism systematically, step-by-ste…p, to make it easily com.
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Lingua: Inglese
Editore: Springer, Springer Sep 2016, 2016
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The book presents a comprehensive survey of the thermoballistic approach to charge carrier transport in semiconductors. This semi-classical approach, which the authors have developed over the past decade, bridges the gap between the op…posing drift-diffusion and ballistic models of carrier transport. While incorporating basic features of the latter two models, the physical concept underlying the thermoballistic approach constitutes a novel, unifying scheme. It is based on the introduction of 'ballistic configurations' arising from a random partitioning of the length of a semiconducting sample into ballistic transport intervals. Stochastic averaging of the ballistic carrier currents over the ballistic configurations results in a position-dependent thermoballistic current, which is the key element of the thermoballistic concept and forms the point of departure for the calculation of all relevant transport properties. In the book, the thermoballistic concept and its implementation are developed in great detail and specific examples of interest to current research in semiconductor physics and spintronics are worked out.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 164 pp. Englisch.
