Isbn: 9783319709161 - semiconductor power devices: physics, characteristics, reliability (9 risultati)

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  • Lingua: Inglese

    Editore: Springer, 2018

    331970916X / 9783319709161

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    Condizione: New. In English.

  • Lingua: Inglese

    Editore: Springer, 2018

    331970916X / 9783319709161

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  • Lingua: Inglese

    Editore: Springer, 2018

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  • Lingua: Inglese

    Editore: Springer, 2018

    331970916X / 9783319709161

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    EUR 330,01

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    Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as keyaspects ofsemiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.…

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    Hardcover. Condizione: Brand New. 2nd edition. 733 pages. 9.45x6.61x1.77 inches. In Stock.

  • Lingua: Inglese

    Editore: Springer, 2018

    331970916X / 9783319709161

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    Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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    Condizione: new. Questo è un articolo print on demand.

  • Lingua: Inglese

    Editore: Springer International Publishing, 2018

    331970916X / 9783319709161

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    Da: moluna, Greven, Germaniamoluna

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    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Describes structure, characteristics and technical features of specific power devices&nbspIncludes sections on packaging and reliabilityUniquely deals with the effects of emittersJosef Lutz studied Physics at the Un.…

  • Lingua: Inglese

    Editore: Springer International Publishing, Springer Nature Switzerland Feb 2018, 2018

    331970916X / 9783319709161

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as keyaspects ofsemiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition. 736 pp. Englisch.…

  • Lingua: Inglese

    Editore: Springer, Springer Feb 2018, 2018

    331970916X / 9783319709161

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    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed.This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 736 pp. Englisch.…