ISBN: 9783319890111 - semiconductor power devices: physics, characteristics, reliability (11 risultati)

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  • Lingua: Inglese

    Editore: Springer, 2019

    3319890115 / 9783319890111

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    Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections

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    EUR 228,34

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    Condizione: New. In English.

  • Lingua: Inglese

    Editore: Springer, 2019

    3319890115 / 9783319890111

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    Da: preigu, Osnabrück, Germaniapreigu

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    Taschenbuch. Condizione: Neu. Semiconductor Power Devices | Physics, Characteristics, Reliability | Josef Lutz (u. a.) | Taschenbuch | xix | Englisch | 2019 | Springer | EAN 9783319890111 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

  • Lingua: Inglese

    Editore: Springer, 2019

    3319890115 / 9783319890111

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    Da: Books Puddle, Woodside, NY, U.S.A.Books Puddle

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    EUR 280,66

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    Condizione: New. pp. 714.

  • Lingua: Inglese

    Editore: Springer, 2019

    3319890115 / 9783319890111

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    EUR 258,46

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    Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as keyaspects ofsemiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.…

  • Lingua: Inglese

    Editore: Springer Verlag, 2019

    3319890115 / 9783319890111

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    Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books

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    EUR 360,08

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    Paperback. Condizione: Brand New. 2nd reprint edition. 736 pages. 9.25x6.10x1.73 inches. In Stock.

  • Lingua: Inglese

    Editore: Springer, 2019

    3319890115 / 9783319890111

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    Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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    EUR 182,29

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    Condizione: new. Questo è un articolo print on demand.

  • Lingua: Inglese

    Editore: Springer International Publishing, 2019

    3319890115 / 9783319890111

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    Da: moluna, Greven, Germaniamoluna

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    EUR 192,60

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    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Describes structure, characteristics and technical features of specific power devices&nbspIncludes sections on packaging and reliabilityUniquely deals with the effects of emittersJosef Lutz studied Physics at the Un.…

  • Lingua: Inglese

    Editore: Springer International Publishing, Springer Nature Switzerland Jun 2019, 2019

    3319890115 / 9783319890111

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    EUR 235,39

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    Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as keyaspects ofsemiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition. 736 pp. Englisch.…

  • Lingua: Inglese

    Editore: Springer, 2019

    3319890115 / 9783319890111

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    Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

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    EUR 296,15

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    Condizione: New. Print on Demand pp. 714.

  • Lingua: Inglese

    Editore: Springer Jun 2019, 2019

    3319890115 / 9783319890111

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    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. Special peculiarities of devices from the ascending semiconductor materials SiC and GaN are discussed. This book presents significant improvements compared to its first edition. It includes chapters on packaging and reliability. The chapter on semiconductor technology is written in a more in-depth way by considering 2D- and high concentration effects. The chapter on IGBTs is extended by new technologies and evaluation of its potential. An extended theory of cosmic ray failures is presented. The range of certain important physical relationships, doubted in recent papers for use in device simulation, is cleared and substantiated in this second edition.Springer Nature Customer Service Center GmbH, Europaplatz 3, 69115 Heidelberg 736 pp. Englisch.…

  • Lingua: Inglese

    Editore: Springer, 2019

    3319890115 / 9783319890111

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    Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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    EUR 298,43

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    Condizione: New. PRINT ON DEMAND pp. 714.