9783330064270 - Study Of Photo Sensor Using Indium Doped Copper Selenide Thin Films di Jain, Arun; Gujarathi, Dhananjay (10 risultati)

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Paperback. Condizione: Brand New. 168 pages. 8.66x5.91x0.38 inches. In Stock.

Taschenbuch. Condizione: Neu. Study Of Photo Sensor Using Indium Doped Copper Selenide Thin Films | Arun Jain (u. a.) | Taschenbuch | 168 S. | Englisch | 2017 | LAP LAMBERT Academic Publishing | EAN 9783330064270 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.

paperback. Condizione: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Thin film science has received tremendous attention in last five-six decades especially after the World war II, because of numerous and widespread applications of thin films in electronic industries, micro-electronics and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. Due to the potential applications, thin films of Indium doped CuSe have been extensively studied by doping N or P-type semiconducting material, so that they may be used in various solid state devices. From the present studies it is seen that there are great potentiality to prepare solar cell and barrier junctions with Cu1-xInxSe by thermal evaporation method by improving their diode quality after proper doping, annealing, reduction of interfacial layer and passivation of surface states etc. As the world moves towards realization of high efficiency photovoltaic cells, the race for intermediate defect band materials is on. Doping and nano technology are in the race to establish them as key to manufacturing such materials. 168 pp. Englisch.

Condizione: New. Print on Demand.

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Jain ArunDr. A B Jain is working as a Asso. Prof. at Pratap College, Amalner since last 27 years. He has published many research papers in reputed Journals. Dr. D N Gujarathi is renowned Ass. Prof. and Researcher of Physics. He has t.

Condizione: New. PRINT ON DEMAND.

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Thin film science has received tremendous attention in last five-six decades especially after the World war II, because of numerous and widespread applications of thin films in electronic industries, micro-electronics and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. Due to the potential applications, thin films of Indium doped CuSe have been extensively studied by doping N or P-type semiconducting material, so that they may be used in various solid state devices. From the present studies it is seen that there are great potentiality to prepare solar cell and barrier junctions with Cu1-xInxSe by thermal evaporation method by improving their diode quality after proper doping, annealing, reduction of interfacial layer and passivation of surface states etc. As the world moves towards realization of high efficiency photovoltaic cells, the race for intermediate defect band materials is on. Doping and nano technology are in the race to establish them as key to manufacturing such materials.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 168 pp. Englisch.

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Thin film science has received tremendous attention in last five-six decades especially after the World war II, because of numerous and widespread applications of thin films in electronic industries, micro-electronics and hybrid circuits, optical devices, sensors, superconductivity and recently high memory computer elements etc. Due to the potential applications, thin films of Indium doped CuSe have been extensively studied by doping N or P-type semiconducting material, so that they may be used in various solid state devices. From the present studies it is seen that there are great potentiality to prepare solar cell and barrier junctions with Cu1-xInxSe by thermal evaporation method by improving their diode quality after proper doping, annealing, reduction of interfacial layer and passivation of surface states etc. As the world moves towards realization of high efficiency photovoltaic cells, the race for intermediate defect band materials is on. Doping and nano technology are in the race to establish them as key to manufacturing such materials.