Isbn: 9783565421473 - trapped electrons: the quantum tunneling of solid-state memory: silicon, barriers, and the microscopic physics powering modern digital storage architecture (3 risultati)

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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 17,99
EUR 61,91 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - How does your smartphone remember thousands of photographs and messages even when the battery is completely drained Traditional computer memory instantly vanishes without a constant electrical current. The secret to modern data persistence relies on exploiting a bizarre, rule-breaking phenomenon of subatomic physics: quantum tunneling.Inside a solid-state drive (SSD), data is stored in billions of microscopic silicon cells called floating gates. These gates are completely surrounded by an impenetrable oxide insulator. To write data, the drive applies a precise, massive voltage spike. Instead of breaking the wall, the electrons literally teleport through the solid barrier via quantum tunneling, becoming permanently trapped inside the gate once the voltage stops.This deep technical dive demystifies the invisible architecture of flash memory. It explores the brutal wear-and-tear this tunneling inflicts on the silicon lattice over time, the mathematical algorithms that prevent data corruption, and the staggering miniaturization of modern semiconductors.Decode the subatomic vault holding your digital life. Understanding quantum tunneling reveals how the modern technology industry harnessed the weirdest properties of quantum mechanics to build indestructible digital libraries.…

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Da: preigu, Osnabrück, Germaniapreigu
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 17,99
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Trapped Electrons: The Quantum Tunneling of Solid-State Memory | Silicon, Barriers, and the Microscopic Physics Powering Modern Digital Storage [.] | Bryan C. Brown | Taschenbuch | Englisch | epubli | EAN 9783565421473 | Verantwortliche Person für die EU: Neopubli GmbH (Imprint: epubli), Köpenicker Str. 154a, 10997 Berlin, produktsicherheit[at]epubli[dot]com | Anbieter: preigu.…

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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 17,99
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -How does your smartphone remember thousands of photographs and messages even when the battery is completely drained Traditional computer memory instantly vanishes without a constant electrical current. The secret to modern data persistence relies on exploiting a bizarre, rule-breaking phenomenon of subatomic physics: quantum tunneling.Inside a solid-state drive (SSD), data is stored in billions of microscopic silicon cells called floating gates. These gates are completely surrounded by an impenetrable oxide insulator. To write data, the drive applies a precise, massive voltage spike. Instead of breaking the wall, the electrons literally teleport through the solid barrier via quantum tunneling, becoming permanently trapped inside the gate once the voltage stops.This deep technical dive demystifies the invisible architecture of flash memory. It explores the brutal wear-and-tear this tunneling inflicts on the silicon lattice over time, the mathematical algorithms that prevent data corruption, and the staggering miniaturization of modern semiconductors.Decode the subatomic vault holding your digital life. Understanding quantum tunneling reveals how the modern technology industry harnessed the weirdest properties of quantum mechanics to build indestructible digital libraries. 120 pp. Englisch. …