Isbn: 9783642099212 - extended defects in germanium: fundamental and technological aspects: 118 (11 risultati)

Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control. …

Condizione: New. pp. xx + 297 1st Edition.

Taschenbuch. Condizione: Neu. Extended Defects in Germanium | Fundamental and Technological Aspects | Cor Claeys (u. a.) | Taschenbuch | Springer Series in Materials Science | xx | Englisch | 2010 | Springer | EAN 9783642099212 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. …

Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Paperback. Condizione: Brand New. reprint edition. 317 pages. 9.25x6.10x0.76 inches. In Stock.

Condizione: new. Questo è un articolo print on demand.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control. 320 pp. Englisch. …

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Deals with all aspects of defects in Ge, an element which is gaining importance again in semiconductor technologyDiscusses all kinds of expanded defects in Ge, such as dislocation, stacking faults, twins, grain boundaries and bubbles on a crystall. …

Condizione: New. Print on Demand pp. xx + 297 231 Illus. (8 Col.).

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the electrical and optical properties, which are important for devices made in dislocated Ge. The second part treats the creation of extended defects during wafer and device processing. Issues are addressed such as defect formation during ion implantation, necessary to create junctions, which are an essential part in every device type. Extended defects are also created during the deposition of thin or thick epitaxial layers on other substrates, which are important for optoelectronic and photovoltaic applications. In brief, the book is intended to provide a fundamental understanding of the extended-defect formation during Ge materials and device processing, providing ways to distinguish harmful from less detrimental defects and should point out ways for defect engineering and control.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 320 pp. Englisch.…

Condizione: New. PRINT ON DEMAND pp. xx + 297.