ISBN: 9783659406751 - an soi ldmos for better switch application: electron devices (9 risultati)

Condizione: New. pp. 84.

Taschenbuch. Condizione: Neu. An SOI LDMOS For Better Switch Application | Electron Devices | Arindam Biswas (u. a.) | Taschenbuch | 84 S. | Englisch | 2013 | LAP LAMBERT Academic Publishing | EAN 9783659406751 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu.…

Paperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET. 84 pp. Englisch.…

Condizione: New. Print on Demand pp. 84 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condizione: New. PRINT ON DEMAND pp. 84.

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1- m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1- m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Biswas ArindamArindam BiswasB.Tech, M.Tech (CU), PhD Submitted (NIT Dgp)Research Interests:Electron Transport, Non Linear Optics, Electron Devices.Publication: Journals and Conferences- 40 Book: 2This book is proposed.…

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book is proposed to develop an SOI (Silicon on Insulator) LDMOS in which a drift region of 1-¿m is added to a conventional n-MOS and compare them on various aspects. The drift region utilizes the RESURF effect that is utilized to distribute the electric field into the LDD region. It is found using two dimensional simulations that the addition of a drift region of 1-¿m in LDMOS improves the performance of the device in terms of breakdown-voltage and switching-speed over the conventional MOSFET.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 84 pp. Englisch.…