ISBN: 9783659677489 - reliability of n-type organic field effect transistors (8 risultati)

Taschenbuch. Condizione: Neu. Reliability of n-Type Organic Field Effect Transistors | Rizwan Ahmed (u. a.) | Taschenbuch | 144 S. | Englisch | 2015 | LAP LAMBERT Academic Publishing | EAN 9783659677489 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu. …

Condizione: New.

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The long time operational stability of C60 based n-type organic field effect transistors (OFETs) was investigated. The changes in the device characteristics were monitored under different conditions of bias stress up to 3000 hours. By measuring several cycles of measurements of transfer and output characteristics, the long time stability of C60 based OFETs and their reproducibility was documented. The major instability of the threshold voltage, was caused by trapping of charges in the active layer or at the interface of semiconductor and dielectric layer. The role of dielectric layers was quantified by choosing three different dielectric layers. It was found that the bias stress induced charges can be trapped in the active layer as well as in the dielectric layer. The charge trapping in the active layer happened ten times faster as compared to the trapping of charges in dielectric layers. The use of appropriate dielectric layers in C60 based OFETs increases the bias stress stability up to 55%. Furthermore, it was shown, that the fabrication of electrically stress stable devices is possible by using C60 layers grown at higher substrate temperature resulting in larger grain sizes. 144 pp. Englisch.…

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The long time operational stability of C60 based n-type organic field effect transistors (OFETs) was investigated. The changes in the device characteristics were monitored under different conditions of bias stress up to 3000 hours. By measuring several cycles of measurements of transfer and output characteristics, the long time stability of C60 based OFETs and their reproducibility was documented. The major instability of the threshold voltage, was caused by trapping of charges in the active layer or at the interface of semiconductor and dielectric layer. The role of dielectric layers was quantified by choosing three different dielectric layers. It was found that the bias stress induced charges can be trapped in the active layer as well as in the dielectric layer. The charge trapping in the active layer happened ten times faster as compared to the trapping of charges in dielectric layers. The use of appropriate dielectric layers in C60 based OFETs increases the bias stress stability up to 55%. Furthermore, it was shown, that the fabrication of electrically stress stable devices is possible by using C60 layers grown at higher substrate temperature resulting in larger grain sizes.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Ahmed RizwanRizwan Ahmed was born in 1981, Pakistan. He did his PhD in the field of Organic Semiconductors from the Institute of Semiconductor and Solid State Physics, JKU Linz, Austria. Currently, he is a Senior Research Scientist (.…

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The long time operational stability of C60 based n-type organic field effect transistors (OFETs) was investigated. The changes in the device characteristics were monitored under different conditions of bias stress up to 3000 hours. By measuring several cycles of measurements of transfer and output characteristics, the long time stability of C60 based OFETs and their reproducibility was documented. The major instability of the threshold voltage, was caused by trapping of charges in the active layer or at the interface of semiconductor and dielectric layer. The role of dielectric layers was quantified by choosing three different dielectric layers. It was found that the bias stress induced charges can be trapped in the active layer as well as in the dielectric layer. The charge trapping in the active layer happened ten times faster as compared to the trapping of charges in dielectric layers. The use of appropriate dielectric layers in C60 based OFETs increases the bias stress stability up to 55%. Furthermore, it was shown, that the fabrication of electrically stress stable devices is possible by using C60 layers grown at higher substrate temperature resulting in larger grain sizes.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 144 pp. Englisch.…

Condizione: New. Print on Demand.

Condizione: New. PRINT ON DEMAND.