9783662024201 - power semiconductors di kubat, m. (10 risultati)
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Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 116,41
EUR 13,98 spedizioneSpedito da Regno Unito a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. In.
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Da: Books Puddle, New York, NY, U.S.A.Books Puddle
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EUR 147,66
EUR 3,42 spedizioneSpedito in U.S.A.Quantità: 4 disponibili
Condizione: New. pp. 536.
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Da: Revaluation Books, Exeter, Regno UnitoRevaluation Books
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 155,23
EUR 14,58 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 2 disponibili
Paperback. Condizione: Brand New. reprint edition. 532 pages. 9.02x5.99x1.30 inches. In Stock.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 106,99
EUR 63,84 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to power semicond…uctors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components.
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- Print on Demand
Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 86,24
EUR 6,80 spedizioneSpedito da Italia a U.S.A.Quantità: Più di 20 disponibili
Condizione: new. Questo è un articolo print on demand.
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- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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EUR 85,59
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related t…o power semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components. 536 pp. Englisch.
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- Print on Demand
Da: moluna, Greven, Germaniamoluna
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 92,27
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular…those related to power semiconductors (Ch.
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- Print on Demand
Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 152,25
EUR 7,58 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 4 disponibili
Condizione: New. Print on Demand pp. 536 23:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on White w/Gloss Lam.
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- Print on Demand
Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 155,74
EUR 9,95 spedizioneSpedito da Germania a U.S.A.Quantità: 4 disponibili
Condizione: New. PRINT ON DEMAND pp. 536.
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- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 106,99
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The book contains a summary of our knowledge of power semiconductor structures. It presents first a short historic introduction (Chap. I) as well as a brief selection of facts from solid state physics, in particular those related to po…wer semiconductors (Chap. 2). The book deals with diode structures in Chap. 3. In addition to fundamental facts in pn-junction theory, the book covers mainly the important processes of power structures. It describes the emitter efficiency and function of microleaks (shunts). the p +p and n + n junctions, and in particular the recent theory of the pin, pvn and p1tn junctions, whose role appears to be decisive for the forward mode not only of diode structures but also of more complex ones. For power diode structures the reverse mode is the decisive factor in pn-junction breakdown theory. The presentation given here uses engineering features (the multiplication factor M and the experimentally detected laws for the volume and surface of crystals), which condenses the presentation and makes the mathematical apparatus simpler. The discussion of diode structures is complemented by data on the tunnel phenomenon as well as on the properties of the semiconductor metal contact which forms the outer layers of the diode or more complex structure. A separate chapter (Chap. 4) is devoted to the two-transistor equivalent of the four layer structure and the solution of the four-layer structure in various modes. This presentation is also directed mainly towards the power aspect and the new components.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 536 pp. Englisch.
