9783736977020 - transceiver technologies for millimeter-wave beam steering applications di tsao, yi-fan (8 risultati)

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  • Lingua: Inglese

    Editore: Cuvillier, 2022

    3736977026 / 9783736977020

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    Da: PBShop.store US, Wood Dale, IL, U.S.A.PBShop.store US

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    PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

  • Lingua: Inglese

    Editore: Cuvillier, 2022

    3736977026 / 9783736977020

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    Da: PBShop.store UK, Fairford, GLOS, Regno UnitoPBShop.store UK

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    PAP. Condizione: New. New Book. Shipped from UK. Established seller since 2000.

  • Lingua: Inglese

    Editore: Cuvillier, 2022

    3736977026 / 9783736977020

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    Da: California Books, Miami, FL, U.S.A.California Books

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  • Lingua: Inglese

    Editore: Cuvillier, 2022

    3736977026 / 9783736977020

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    Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections

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  • Lingua: Inglese

    Editore: Cuvillier Nov 2022, 2022

    3736977026 / 9783736977020

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -During the past years, wireless communication systems have been rapidly advancing to meet the high data-rate requirements of various emerging applications. However, the existing transceivers have typically been demonstrated using CMOS-compatible technologies that deliver a relatively low equivalent isotropic radiated power in a small unit cell. Moreover, the particular device characteristics are limiting the linear region for operation. Therefore, the main focus of this dissertation is to present and discuss new design methods for transceivers to solve these issues.To reduce the complexity of the transceiver module for further phased-array scaling, a low-noise power amplifier design approach is designed using a 0.15-¿m GaN-on-SiC high-electron mobility transistor technology (HEMT). Utilizing a traded off interstage matching topology between loss and bandwidth, the conversion loss induced by the matching network could be effectively reduced. A stacked-FET configuration was adopted to enhance the power handling of the RF switch. Further improvement on the isolation bandwidth was investigated using theoretical analysis on the intrinsic effect of the passive HEMTs. With the successful implementation of the RF front-end circuits, transceiver modules were integrated on Rogers RO3010 substrate. The planar dual exponentially tapered slot antenna phased-array system showed a compact size with simple biasing network compared to the conventional transceiver approach. The presented T/R module was characterized with an over-the-air test at a distance of 1 m, overcoming the free space path loss of 64 dB. It also shows a high flexibility for further integration with a larger number of array systems, which is very promising for future 5G communication systems. 146 pp. Englisch.

  • Lingua: Inglese

    Editore: Cuvillier Verlag, 2022

    3736977026 / 9783736977020

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    Da: moluna, Greven, Germaniamoluna

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    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt.

  • Lingua: Inglese

    Editore: Cuvillier, Cuvillier Nov 2022, 2022

    3736977026 / 9783736977020

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    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -During the past years, wireless communication systems have been rapidly advancing to meet the high data-rate requirements of various emerging applications. However, the existing transceivers have typically been demonstrated using CMOS-compatible technologies that deliver a relatively low equivalent isotropic radiated power in a small unit cell. Moreover, the particular device characteristics are limiting the linear region for operation. Therefore, the main focus of this dissertation is to present and discuss new design methods for transceivers to solve these issues.To reduce the complexity of the transceiver module for further phased-array scaling, a low-noise power amplifier design approach is designed using a 0.15-¿m GaN-on-SiC high-electron mobility transistor technology (HEMT). Utilizing a traded off interstage matching topology between loss and bandwidth, the conversion loss induced by the matching network could be effectively reduced. A stacked-FET configuration was adopted to enhance the power handling of the RF switch. Further improvement on the isolation bandwidth was investigated using theoretical analysis on the intrinsic effect of the passive HEMTs. With the successful implementation of the RF front-end circuits, transceiver modules were integrated on Rogers RO3010 substrate. The planar dual exponentially tapered slot antenna phased-array system showed a compact size with simple biasing network compared to the conventional transceiver approach. The presented T/R module was characterized with an over-the-air test at a distance of 1 m, overcoming the free space path loss of 64 dB. It also shows a high flexibility for further integration with a larger number of array systems, which is very promising for future 5G communication systems.Cuvillier Verlag, Nonnenstieg 8, 37075 Göttingen 146 pp. Englisch.

  • Lingua: Inglese

    Editore: Cuvillier, 2022

    3736977026 / 9783736977020

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    EUR 47,88

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    Quantità: 1 disponibili

    Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - During the past years, wireless communication systems have been rapidly advancing to meet the high data-rate requirements of various emerging applications. However, the existing transceivers have typically been demonstrated using CMOS-compatible technologies that deliver a relatively low equivalent isotropic radiated power in a small unit cell. Moreover, the particular device characteristics are limiting the linear region for operation. Therefore, the main focus of this dissertation is to present and discuss new design methods for transceivers to solve these issues.To reduce the complexity of the transceiver module for further phased-array scaling, a low-noise power amplifier design approach is designed using a 0.15-¿m GaN-on-SiC high-electron mobility transistor technology (HEMT). Utilizing a traded off interstage matching topology between loss and bandwidth, the conversion loss induced by the matching network could be effectively reduced. A stacked-FET configuration was adopted to enhance the power handling of the RF switch. Further improvement on the isolation bandwidth was investigated using theoretical analysis on the intrinsic effect of the passive HEMTs. With the successful implementation of the RF front-end circuits, transceiver modules were integrated on Rogers RO3010 substrate. The planar dual exponentially tapered slot antenna phased-array system showed a compact size with simple biasing network compared to the conventional transceiver approach. The presented T/R module was characterized with an over-the-air test at a distance of 1 m, overcoming the free space path loss of 64 dB. It also shows a high flexibility for further integration with a larger number of array systems, which is very promising for future 5G communication systems.