Isbn: 9783844382235 - passivation kinetics at semiconductor interfaces: interaction of hydrogen with gaas surfaces and si/sio2 interfaces (8 risultati)

Condizione: New. pp. 168.

Taschenbuch. Condizione: Neu. Passivation Kinetics at Semiconductor Interfaces | Interaction of hydrogen with GaAs surfaces and Si/SiO2 interfaces | Ligia Gheorghita | Taschenbuch | 168 S. | Englisch | 2011 | LAP LAMBERT Academic Publishing | EAN 9783844382235 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. …

Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This work describes the interaction of atomic hydrogen with defects at GaAs surfaces and Si/SiO2 interfaces. By continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system it was observed that there was an initial irreversible passivation of the surface in the presence of the hydrogen atoms. This was followed by an improved, reversible passivation that occurred when the exposure to atomic hydrogen was discontinued. Similar results were obtained when the concentration of defects at the interface of Si/SiO2 was monitored continuously, in situ, with a remote radio frequency (RF) probe that measured the steady-state photogenerated carriers. By comparing the GaAs and Si/SiO2 systems it was concluded that hydrogen atoms could be trapped at interstitial sites near both interfaces. The reaction of molecular hydrogen with defects at Si/SiO2 interfaces was also investigated using the RF-probe. The results indicated the presence of other interfacial defects that react with H2, which could not be detected in earlier electron paramagnetic resonance studies. 168 pp. Englisch.…

Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This work describes the interaction of atomic hydrogen with defects at GaAs surfaces and Si/SiO2 interfaces. By continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system it was observed that there was an initial irreversible passivation of the surface in the presence of the hydrogen atoms. This was followed by an improved, reversible passivation that occurred when the exposure to atomic hydrogen was discontinued. Similar results were obtained when the concentration of defects at the interface of Si/SiO2 was monitored continuously, in situ, with a remote radio frequency (RF) probe that measured the steady-state photogenerated carriers. By comparing the GaAs and Si/SiO2 systems it was concluded that hydrogen atoms could be trapped at interstitial sites near both interfaces. The reaction of molecular hydrogen with defects at Si/SiO2 interfaces was also investigated using the RF-probe. The results indicated the presence of other interfacial defects that react with H2, which could not be detected in earlier electron paramagnetic resonance studies.…

Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Gheorghita LigiaLigia Gheorghita, PhD. MSc at the University of Guelph, Ontario. PhD inPhysical Chemistry at the University of British Columbia, Vancouver, Canada.This work describes the interaction of atomic hydrogen with defect.…

Condizione: New. Print on Demand pp. 168 2:B&W 6 x 9 in or 229 x 152 mm Perfect Bound on Creme w/Gloss Lam.

Condizione: New. PRINT ON DEMAND pp. 168.

Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This work describes the interaction of atomic hydrogen with defects at GaAs surfaces and Si/SiO2 interfaces. By continuously monitoring the photoluminescence of a GaAs wafer in a discharge-flow system it was observed that there was an initial irreversible passivation of the surface in the presence of the hydrogen atoms. This was followed by an improved, reversible passivation that occurred when the exposure to atomic hydrogen was discontinued. Similar results were obtained when the concentration of defects at the interface of Si/SiO2 was monitored continuously, in situ, with a remote radio frequency (RF) probe that measured the steady-state photogenerated carriers. By comparing the GaAs and Si/SiO2 systems it was concluded that hydrogen atoms could be trapped at interstitial sites near both interfaces. The reaction of molecular hydrogen with defects at Si/SiO2 interfaces was also investigated using the RF-probe. The results indicated the presence of other interfacial defects that react with H2, which could not be detected in earlier electron paramagnetic resonance studies.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 168 pp. Englisch.…