Lingua: Inglese
Editore: LAP Lambert Academic Publishing, 2012
ISBN 10: 384733932X ISBN 13: 9783847339328
Da: preigu, Osnabrück, Germania
EUR 51,10
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Investigations at Metal/Si Surfaces and Interfaces | Study of Structural, Morphological, Magnetic and Electrical Behaviour | Shivani Agarwal (u. a.) | Taschenbuch | Englisch | LAP Lambert Academic Publishing | EAN 9783847339328 | Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivibas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 384733932X ISBN 13: 9783847339328
Da: Mispah books, Redhill, SURRE, Regno Unito
EUR 140,57
Quantità: 1 disponibili
Aggiungi al carrelloPaperback. Condizione: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2012
ISBN 10: 384733932X ISBN 13: 9783847339328
Da: moluna, Greven, Germania
EUR 49,26
Quantità: Più di 20 disponibili
Aggiungi al carrelloKartoniert / Broschiert. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Agarwal ShivaniDr. Shivani Agarwal obtained her Ph.D. in 2007 from University of Rajasthan-Jaipur,India.She has worked as ICTP-TRIL fellow at ENEA-Casaccia, Rome.She is working as PostDoctoral Fellow at University of Rajasthan.Prof.I.
Lingua: Inglese
Editore: LAP Lambert Academic Publishing, 2012
ISBN 10: 384733932X ISBN 13: 9783847339328
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 59,71
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The interaction of semiconductor surfaces with deposited metals is very important for understanding many aspects of the behavior of microelectronic devices. The early stages of metal-semiconductor interface formation are amenable to analysis with surface sensitive techniques. The most important characteristic of metal semiconductor interface is nature of the potential barrier between the Fermi level in the metal and the majority carrier band edge of semiconductor of that interface. The study of metal / semiconductor (Si) reactions are of great importance present in every semiconductor device.The present book is an outcome of investigations of structural, morphological, magnetic and electrical behaviour of metal (Co, Cr, Ni) / semiconductor (Si) system.