9786139834945 - theoretical study of electrical properties of n-type gan: transport in nanostructure di biswas, arindam; haldar, sandip; sarkar, debasish (5 risultati)
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Da: preigu, Osnabrück, Germaniapreigu
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Taschenbuch. Condizione: Neu. Theoretical Study of Electrical Properties of n-type GaN | Transport in Nanostructure | Arindam Biswas (u. a.) | Taschenbuch | 76 S. | Englisch | 2018 | LAP LAMBERT Academic Publishing | EAN 9786139834945 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt,… info[at]bod[dot]de | Anbieter: preigu.
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electro…ns have been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te 100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed. 76 pp. Englisch.
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Da: moluna, Greven, Germaniamoluna
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Biswas Dr. ArindamDr. Arindam BISWAS received M-Tech degree in Radio Physics and Electronics from University of Calcutta, India in 2010 and PhD from NIT Durgapur in 2013. He was a Post-Doctoral Researc…her at Pusan National Universit.
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
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EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons h…ave been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 76 pp. Englisch.
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Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
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EUR 60,66 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In this book, A theoretical model of energy loss mechanism as a function of electron temperature and electron concentration has been given for n-type GaN structures. The energy relaxation rates and mobility for warm and hot electrons ha…ve been calculated for over the electron temperature(T) range of 1.5 to 500 K at lattice temperature T0=1.5 K. It has been found that the acoustic phonon scattering due to deformation potential and piezoelectric coupling are the dominant scattering mechanisms at low electron temperatures (Te 100 K, the polar optic phonon scattering becomes the effective scattering mechanism. The optic phonon energy of GaN was obtained as 91.8 meV and the PO phonon emission time as 8.6 fs. Also, the drift velocity of electrons as function of electron temperature and electric field has been obtained. The theoretical results are compared with available experimental results and a good agreement is observed.
