Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: Books Puddle, New York, NY, U.S.A.
Condizione: New.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: preigu, Osnabrück, Germania
EUR 60,95
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. Analytical Modeling and Simulation of TMSG MOSFETs | P. Suveetha Dhanaselvam (u. a.) | Taschenbuch | 176 S. | Englisch | 2019 | LAP LAMBERT Academic Publishing | EAN 9786200213792 | Verantwortliche Person für die EU: BoD - Books on Demand, In de Tarpen 42, 22848 Norderstedt, info[at]bod[dot]de | Anbieter: preigu.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: Revaluation Books, Exeter, Regno Unito
EUR 131,71
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Aggiungi al carrelloPaperback. Condizione: Brand New. 176 pages. 8.66x5.91x0.40 inches. In Stock.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing Jul 2019, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 71,90
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Insight on Nanodevices: Revealing types of MOSFETs, Need for miniaturization, The Short Channel Effects involved in scaling the devices, Design of Halo MOSFETs, Different Parameters involved in the design, Exploring the Switching Characteristics, Analytical Modeling of MOSFET, Research issues in design of nanoMOSFETs, Performance analysis of the device, Channel and gate Engineering, Experimental analysis of TMSG MOSFET 176 pp. Englisch.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: moluna, Greven, Germania
EUR 58,12
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Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Suveetha Dhanaselvam P.P. Suveetha Dhanaselvam was born on 29-12-1979. She received her B.E degree in ECE, M.E degree in Applied Electronics and Ph.D in analog VLSI. She is currently pursuing projects in nano devices. She has teachin.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: Majestic Books, Hounslow, Regno Unito
EUR 113,05
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 113,94
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Aggiungi al carrelloCondizione: New. PRINT ON DEMAND.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing Jul 2019, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 71,90
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Insight on Nanodevices: Revealing types of MOSFETs, Need for miniaturization, The Short Channel Effects involved in scaling the devices, Design of Halo MOSFETs, Different Parameters involved in the design, Exploring the Switching Characteristics, Analytical Modeling of MOSFET, Research issues in design of nanoMOSFETs, Performance analysis of the device, Channel and gate Engineering, Experimental analysis of TMSG MOSFETVDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 176 pp. Englisch.
Lingua: Inglese
Editore: LAP LAMBERT Academic Publishing, 2019
ISBN 10: 6200213798 ISBN 13: 9786200213792
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 72,76
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Aggiungi al carrelloTaschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Insight on Nanodevices: Revealing types of MOSFETs, Need for miniaturization, The Short Channel Effects involved in scaling the devices, Design of Halo MOSFETs, Different Parameters involved in the design, Exploring the Switching Characteristics, Analytical Modeling of MOSFET, Research issues in design of nanoMOSFETs, Performance analysis of the device, Channel and gate Engineering, Experimental analysis of TMSG MOSFET.