9786202672030 - dielectric and work function engineered doping-less tunnel fet: subthreshold modeling, simulation and analysis di lakshmi priya, g.; balamurugan, n. b. (8 risultati)
- Brossura
Da: moluna, Greven, Germaniamoluna
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 59,05
EUR 48,99 spedizioneSpedito da Germania a U.S.A.Quantità: Più di 20 disponibili
Condizione: New.
- Brossura
Da: Books Puddle, New York, NY, U.S.A.Books Puddle
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 110,87
EUR 3,45 spedizioneSpedito in U.S.A.Quantità: 4 disponibili
Condizione: New.
- Brossura
- Print on Demand
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 71,90
EUR 23,00 spedizioneSpedito da Germania a U.S.A.Quantità: 2 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and s…ubthreshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator. 200 pp. Englisch.
- Brossura
- Print on Demand
Da: Majestic Books, Hounslow, Regno UnitoMajestic Books
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 113,28
EUR 7,60 spedizioneSpedito da Regno Unito a U.S.A.Quantità: 4 disponibili
Condizione: New. Print on Demand.
- Brossura
- Print on Demand
Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios
Contatta il venditoreVenditore con 4 stelleCondizione: Nuovo
EUR 116,32
EUR 9,95 spedizioneSpedito da Germania a U.S.A.Quantità: 4 disponibili
Condizione: New. PRINT ON DEMAND.
- Brossura
- Print on Demand
Da: preigu, Osnabrück, Germaniapreigu
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 60,35
EUR 70,00 spedizioneSpedito da Germania a U.S.A.Quantità: 5 disponibili
Taschenbuch. Condizione: Neu. Dielectric and Work Function Engineered Doping-Less Tunnel FET | Subthreshold Modeling, Simulation and Analysis | G. Lakshmi Priya (u. a.) | Taschenbuch | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786202672030 | Verantwortliche Person für die EU: LAP Lambert Academic Publishing, Brivi…bas Gatve 197, 1039 RIGA, LETTLAND, customerservice[at]vdm-vsg[dot]de | Anbieter: preigu Print on Demand.
- Brossura
- Print on Demand
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 71,90
EUR 60,00 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subth…reshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 200 pp. Englisch.
- Brossura
- Print on Demand
Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH
Contatta il venditoreVenditore con 5 stelleCondizione: Nuovo
EUR 72,76
EUR 61,58 spedizioneSpedito da Germania a U.S.A.Quantità: 1 disponibili
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The perpetual downscaling of devices has achieved higher packaging density and faster switching performance. As the physical dimensions of FET device are scaled down consistently, many undesirable Short Channel Effects (SCEs) and subthr…eshold leakage current becomes more dominant and deteriorates the performance of the devices. The major driving force for the proposed book is to overcome all these above limitations with advancements in the materials science and semiconductor industry. Doping-Less Tunnel FET's (Junctionless Tunnel FET - JLTFET) have evolved as the most gratifying candidate. The absence of gradient doping concentration makes the fabrication process much simpler and offers low thermal budget. The high-K gate stack engineered device overcomes the SCEs caused by the ultrathin silicon devices. This book is designed to formulate a subthreshold model for Dual Metal Dielectric Engineered Doping-Less Tunnel FET by solving a two-dimensional Poisson's equation using Parabolic approximation method. Also, the impact of different high-K gate oxide materials with Silicon dioxide is also studied using TCAD Sentaurus device simulator.
