Isbn: 9787309169836 (1 risultati)

paperback. Condizione: New. Language:Chinese.Paperback. Pub Date: 2026-01 Publisher: Fudan University Press This book investigates the development of the embedded SiGe source/drain epitaxy process and the corresponding key issues of PMOSFETs based on 28 nm logic technology with polycrystalline Si/SiON gate structure. successfully achieving high-quality SiGe source/drain epitaxy. A novel process using ion implantation technology to improve source/drain characteristics has also been developed. which can better meet the ma.…