Da: Ria Christie Collections, Uxbridge, Regno Unito
EUR 115,41
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. In.
Condizione: New. pp. 192.
Da: Revaluation Books, Exeter, Regno Unito
EUR 150,68
Quantità: 2 disponibili
Aggiungi al carrelloPaperback. Condizione: Brand New. reprint edition. 192 pages. 9.25x6.10x0.44 inches. In Stock.
Da: preigu, Osnabrück, Germania
EUR 95,15
Quantità: 5 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Research on the Radiation Effects and Compact Model of SiGe HBT | Yabin Sun | Taschenbuch | Springer Theses | xxiv | Englisch | 2019 | Springer | EAN 9789811351815 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Da: AHA-BUCH GmbH, Einbeck, Germania
EUR 112,77
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Da: Brook Bookstore On Demand, Napoli, NA, Italia
EUR 86,24
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: new. Questo è un articolo print on demand.
Lingua: Inglese
Editore: Springer Nature Singapore Jan 2019, 2019
ISBN 10: 9811351813 ISBN 13: 9789811351815
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
EUR 106,99
Quantità: 2 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique. 192 pp. Englisch.
Da: moluna, Greven, Germania
EUR 92,27
Quantità: Più di 20 disponibili
Aggiungi al carrelloCondizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Dr. Yabin Sun received his bachelor s degree in Electronic Science and Technology from Jilin University, China in 2010, and his Ph.D in Microelectronics from Tsinghua University, China in 2015. His research focuses on the reliability, d.
Da: Majestic Books, Hounslow, Regno Unito
EUR 146,09
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. Print on Demand pp. 192.
Da: Biblios, Frankfurt am main, HESSE, Germania
EUR 147,33
Quantità: 4 disponibili
Aggiungi al carrelloCondizione: New. PRINT ON DEMAND pp. 192.
Lingua: Inglese
Editore: Springer, Springer Jan 2019, 2019
ISBN 10: 9811351813 ISBN 13: 9789811351815
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
EUR 106,99
Quantità: 1 disponibili
Aggiungi al carrelloTaschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Nominated as an outstanding PhD dissertation by Tsinghua University, ChinaSpringer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 192 pp. Englisch.