Isbn: 9789811962486 - multilayer magnetic nanostructures: properties and applications (9 risultati)

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  • Lingua: Inglese

    Editore: Springer, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Condizione: New. 2023rd edition NO-PA16APR2015-KAP.

  • Lingua: Inglese

    Editore: Springer, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Taschenbuch. Condizione: Neu. Multilayer Magnetic Nanostructures | Properties and Applications | Alexander S. Sigov | Taschenbuch | Springer Aerospace Technology | xi | Englisch | 2024 | Springer | EAN 9789811962486 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.

  • Lingua: Inglese

    Editore: Springer, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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    Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic intensity, it is necessary to use both on board the aircraft and in ground services computing devices that guarantee the required level of flight safety. The book shows that in the multilayer ferromagnet-antiferromagnet system, the behavior of magnetic parameters in layers of nanometer thickness is largely determined by frustrations. The monograph provides not only a complete analysis of the current state of magnetic nanostructures but also predicts new types generated by exchange interaction frustrations. The phase diagrams 'layer thickness (layers)-roughness' of a thin ferromagnetic film on an antiferromagnetic substrate and a spin-valve system ferromagnet-antiferromagnet-ferromagnet are constructed taking into account the energy of single-ion anisotropy. The book presents experimental results that confirm the existence of a new type of domain walls. It is shown that the detected domain walls appear exactly at the locations of the atomic steps, and their thickness increases in proportion to the film thickness with a proportionality coefficient of the order of one. Special attention using mathematical models is placed for optimal orientation of spins at a smooth interface in the case of a compensated cross section of an antiferromagnet and an uncompensated cross section. The constructed phase diagrams and models are compared with the experiments. It is thus concluded that scanning tunneling microscopy (STM) makes it possible to study domain walls generated by frustration on the surface of the structure.

  • Lingua: Inglese

    Editore: Springer, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Da: Brook Bookstore On Demand, Napoli, NA, ItaliaBrook Bookstore On Demand

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    Condizione: new. Questo è un articolo print on demand.

  • Lingua: Inglese

    Editore: Springer Nature Singapore Jun 2024, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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    Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware 156 pp. Englisch.

  • Lingua: Inglese

    Editore: Springer, Berlin|Springer Nature Singapore|Springer, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Da: moluna, Greven, Germaniamoluna

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    Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. This book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic inte.

  • Lingua: Inglese

    Editore: Springer, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Da: Majestic Books, Hounslow, Regno UnitoMajestic Books

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    EUR 165,80

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    Condizione: New. Print on Demand.

  • Lingua: Inglese

    Editore: Springer, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Da: Biblios, frankfurt am main, HESSE, GermaniaBiblios

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    EUR 166,76

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    Condizione: New. PRINT ON DEMAND.

  • Lingua: Inglese

    Editore: Springer, Springer Jun 2024, 2024

    9811962480 / 9789811962486

    Serie: Libro 62 di 63 - Springer Aerospace Technology

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    Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germaniabuchversandmimpf2000

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    Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book presents relevant issues for the development of computer technology in general and civil aviation in particular, related to the promising task of developing magnetoresistive memory. In modern conditions of constantly increasing air traffic intensity, it is necessary to use both on board the aircraft and in ground services computing devices that guarantee the required level of flight safety. The book shows that in the multilayer ferromagnet-antiferromagnet system, the behavior of magnetic parameters in layers of nanometer thickness is largely determined by frustrations. The monograph provides not only a complete analysis of the current state of magnetic nanostructures but also predicts new types generated by exchange interaction frustrations. The phase diagrams 'layer thickness (layers)¿roughness' of a thin ferromagnetic film on an antiferromagnetic substrate and a spin-valve system ferromagnet-antiferromagnet-ferromagnet are constructed taking into account the energy of single-ion anisotropy. The book presents experimental results that confirm the existence of a new type of domain walls. It is shown that the detected domain walls appear exactly at the locations of the atomic steps, and their thickness increases in proportion to the film thickness with a proportionality coefficient of the order of one. Special attention using mathematical models is placed for optimal orientation of spins at a smooth interface in the case of a compensated cross section of an antiferromagnet and an uncompensated cross section. The constructed phase diagrams and models are compared with the experiments. It is thus concluded that scanning tunneling microscopy (STM) makes it possible to study domain walls generated by frustration on the surface of the structure.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 156 pp. Englisch.